Datasheet > AT49F001AT-55VJ

AT49F001AT-55VJ

更新时间： 2024-11-25 03:14:43

品牌	Logo	应用领域
爱特美尔 - ATMEL		光电二极管
页数	文件大小	规格书
18页	413K
描述
Flash, 128KX8, 55ns, PDSO32, 8 X 14 MM, PLASTIC, MO-142BA, VSOP-32

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AT49F001AT-55VJ 数据手册

Features

• Single-voltage Operation

– 5V Read

– 5V Reprogramming

• Fast Read Access Time – 45 ns

• Internal Program Control and Timer

• Sector Architecture

– One 16K Bytes Boot Block with Programming Lockout

– Two 8K Bytes Parameter Blocks

– Two Main Memory Blocks (32K Bytes, 64K Bytes)

• Fast Erase Cycle Time – 3 Seconds

• Byte-by-Byte Programming – 30 µs/Byte Typical

• Hardware Data Protection

1-megabit

(128K x 8)

5-volt Only

Flash Memory

• DATA Polling for End of Program Detection

• Low Power Dissipation

– 30 mA Active Current

– 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles

• Green (Pb/Halide-free) Packaging Option

AT49F001A

AT49F001AN

AT49F001AT

AT49F001ANT

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1. Description

The AT49F001A(N)(T) is a 5-volt only in-system reprogrammable Flash memory. Its

1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers access times to

45 ns with power dissipation of just 165 mW over the industrial temperature range.

When the device is deselected, the CMOS standby current is less than 50 µA. For the

AT49F001AN(T), pin 1 for the PLCC package and pin 9 for the TSOP package are no

connect pins.

To allow for simple in-system reprogrammability, the AT49F001A(N)(T) does not

require high input voltages for programming. Five-volt-only commands determine the

read and programming operation of the device. Reading data out of the device is sim-

ilar to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus

contention. Reprogramming the AT49F001A(N)(T) is performed by erasing a block of

data and then programming on a byte by byte basis. The byte programming time is a

fast 30 µs. The end of a program cycle can be optionally detected by the DATA polling

feature. Once the end of a byte program cycle has been detected, a new access for a

read or program can begin. The typical number of program and erase cycles is in

excess of 10,000 cycles.

The device is erased by executing the erase command sequence; the device inter-

nally controls the erase operations. There are two 8K byte parameter block sections,

two main memory blocks, and one boot block.

The device has the capability to protect the data in the boot block; this feature is

enabled by a command sequence. The 16K-byte boot block section includes a repro-

gramming lock out feature to provide data integrity. The boot sector is designed to

contain user secure code, and when the feature is enabled, the boot sector is

protected from being reprogrammed.

3365E–FLASH–4/05

12 3 4 5 6 7...18

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与AT49F001AT-55VJ相关器件

型号	品牌	获取价格	描述	数据表
AT49F001N	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only Flash Memory
AT49F001N-12JC	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only Flash Memory
AT49F001N-12JI	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only Flash Memory
AT49F001N-12PC	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only Flash Memory
AT49F001N-12PI	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only Flash Memory
AT49F001N-12TC	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only Flash Memory
AT49F001N-12TI	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only Flash Memory
AT49F001N-12VC	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only Flash Memory
AT49F001N-12VI	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only Flash Memory
AT49F001N-55JC	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only Flash Memory

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