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AT49BV3218T-11TI PDF预览

AT49BV3218T-11TI

更新时间: 2024-10-31 05:07:15
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路光电二极管异步传输模式ATM
页数 文件大小 规格书
25页 223K
描述
32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory

AT49BV3218T-11TI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:20 X12 MM, PLASTIC, MO-142DD, TSOP1-48针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.91
最长访问时间:110 ns其他特性:TOP OR BOTTOM BOOT BLOCK
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:8,63端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:2.7/3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.065 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.65 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

AT49BV3218T-11TI 数据手册

 浏览型号AT49BV3218T-11TI的Datasheet PDF文件第2页浏览型号AT49BV3218T-11TI的Datasheet PDF文件第3页浏览型号AT49BV3218T-11TI的Datasheet PDF文件第4页浏览型号AT49BV3218T-11TI的Datasheet PDF文件第5页浏览型号AT49BV3218T-11TI的Datasheet PDF文件第6页浏览型号AT49BV3218T-11TI的Datasheet PDF文件第7页 
Features  
Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)  
Access Time – 85 ns  
Sector Erase Architecture  
– Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout  
Fast Word Program Time – 15 µs  
Fast Sector Erase Time – 200 ms  
Dual-plane Organization, Permitting Concurrent Read while Program/Erase  
Memory Plane A: Eight 4K Word and Fifteen 32K Word Sectors  
Memory Plane B: Forty-eight 32K Word Sectors  
Erase Suspend Capability  
– Supports Reading/Programming Data from Any Sector by Suspending Erase of  
Any Different Sector  
Low-power Operation  
32-megabit  
(2M x 16/4M x 8)  
3-volt Only  
– 25 mA Active  
– 10 µA Standby  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
RESET Input for Device Initialization  
Sector Lockdown Support  
Flash Memory  
TSOP and CBGA Package Options  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
AT49BV3218  
AT49BV3218T  
AT49LV3218  
AT49LV3218T  
Description  
The AT49BV/LV3218(T) is a 2.65- to 3.3-volt (BV)/3.0V to 3.6V (LV) 32-megabit Flash  
memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits  
each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The  
memory is divided into 71 sectors for erase operations. The device is offered in 48-  
lead TSOP and 48-ball CBGA packages. The device has CE and OE control signals to  
avoid any bus contention. This device can be read or reprogrammed using a single  
2.65V power supply, making it ideally suited for in-system programming.  
Not Recommended for  
New Designs. New  
Designs Should Use  
AT49BV/LV320(T)/321(T)  
Pin Configurations  
Pin Name  
A0 - A20  
CE  
Function  
Addresses  
Chip Enable  
OE  
Output Enable  
WE  
Write Enable  
RESET  
RDY/BUSY  
VPP  
Reset  
READY/BUSY Output  
Optional Power Supply  
I/O0 - I/O14  
I/O15 (A-1)  
BYTE  
Data Inputs/Outputs  
I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)  
Selects Byte or Word Mode  
No Connect  
NC  
Rev. 2452F–FLASH–10/02  

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