Datasheet > 存储 > 闪存> AT49BV040B

AT49BV040B

更新时间： 2024-11-08 06:38:23

品牌	Logo	应用领域
爱特美尔 - ATMEL		/
页数	文件大小	规格书
21页	336K
描述
4-megabit (512K x 8) Flash Memory

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AT49BV040B 数据手册

Features

•

Single Supply for Read and Write: 2.7V to 5.5V

Fast Read Access Time – 70 ns (V_CC= 2.7V to 3.6V); 55 ns (V_CC= 4.5V to 5.5V)

Internal Program Control and Timer

Flexible Sector Architecture

– One 16K Bytes Boot Sector with Programming Lockout

– Two 8K Bytes Parameter Sectors

– Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes)

Fast Erase Cycle Time – 8 Seconds

•

4-megabit

(512K x 8)

Byte-by-Byte Programming – 10 µs/Byte Typical

Hardware Data Protection

DATA Polling or Toggle Bit for End of Program Detection

Low Power Dissipation

Flash Memory

– 20 mA Active Current

– 25 µA CMOS Standby Current for V_CC= 2.7V to 3.6V

– 30 µA CMOS Standby Current for V_CC= 4.5V to 5.5V

Minimum 100,000 Write Cycles

AT49BV040B

•

1. Description

The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its

4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of

70 ns (V_CC= 2.7V to 3.6V) and an access time of 55 ns (V_CC= 4.5V to 5.5V). The

power dissipation over the industrial temperature range with V_CC= 2.7V to 3.6V is 72

mW and is 110 mW with V_CC= 4.5V to 5.5V.

When the device is deselected, the CMOS standby current is less than 30 µA. To

allow for simple in-system reprogrammability, the AT49BV040B does not require high

input voltages for programming. Reading data out of the device is similar to reading

from an EPROM; it has standard CE, OE, and WE inputs to avoid bus contention.

Reprogramming the AT49BV040B is performed by erasing a sector of data and then

programming on a byte by byte basis. The byte programming time is a fast 10 µs. The

end of a program or erase cycle can be optionally detected by the DATA polling or

toggle bit feature. Once the end of a byte program cycle has been detected, a new

access for a read or program can begin. The typical number of program and erase

cycles is in excess of 100,000 cycles.

The device is erased by executing a chip erase or a sector erase command sequence;

the device internally controls the erase operations. The memory array of the

AT49BV040B is organized into two 8K byte parameter sectors, eight main memory

sectors, and one boot sector.

The device has the capability to protect the data in the boot sector; this feature is

enabled by a command sequence. The 16K-byte boot sector includes a reprogram-

ming lock out feature to provide data integrity. The boot sector is designed to contain

user secure code, and when the feature is enabled, the boot sector is permanently

protected from being reprogrammed.

3499B–FLASH–4/06

12 3 4 5 6 7...21

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与AT49BV040B相关器件

型号	品牌	获取价格	描述	数据表
AT49BV040B-70JU	ATMEL	获取价格	Flash, 512KX8, 70ns, PQCC32, GREEN, PLASTIC, MS-016AE, LCC-32
AT49BV040B-70TU	ATMEL	获取价格	Flash, 512KX8, 70ns, PDSO32, 8 X 20 MM, GREEN, PLASTIC, MO-142BD, TSOP1-32
AT49BV040B-70VU	ATMEL	获取价格	Flash, 512KX8, 70ns, PDSO32, 8 X 14 MM, GREEN, PLASTIC, MO-142BA, VSOP-32
AT49BV040B-JU	ATMEL	获取价格	4-megabit (512K x 8) Flash Memory
AT49BV040B-TU	ATMEL	获取价格	4-megabit (512K x 8) Flash Memory
AT49BV040B-VU	ATMEL	获取价格	4-megabit (512K x 8) Flash Memory
AT49BV040T	ATMEL	获取价格	4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV040T-12JC	ETC	获取价格	x8 Flash EEPROM
AT49BV040T-12JI	ETC	获取价格	x8 Flash EEPROM
AT49BV040T-12TC	ETC	获取价格	x8 Flash EEPROM

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