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AT45DB321E-CCHF2B-B PDF预览

AT45DB321E-CCHF2B-B

更新时间: 2024-11-13 12:34:51
品牌 Logo 应用领域
其他 - ETC 闪存
页数 文件大小 规格书
72页 2917K
描述
32-Mbit DataFlash (with Extra 1-Mbits), 2.3V Minimum SPI Serial Flash Memory

AT45DB321E-CCHF2B-B 数据手册

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AT45DB321E  
32-Mbit DataFlash (with Extra 1-Mbits), 2.3V Minimum  
SPI Serial Flash Memory  
Features  
Single 2.3V - 3.6V supply  
Serial Peripheral Interface (SPI) compatible  
Supports SPI modes 0 and 3  
Supports RapidSoperation  
Continuous read capability through entire array  
Up to 85MHz  
Low-power read option up to 15MHz  
Clock-to-output time (tV) of 6ns maximum  
User configurable page size  
512 bytes per page  
528 bytes per page (default)  
Page size can be factory pre-configured for 512 bytes  
Two fully independent SRAM data buffers (512/528 bytes)  
Flexible programming options  
Byte/Page Program (1 to 512/528 bytes) directly into main memory  
Buffer Write  
Buffer to Main Memory Page Program  
Flexible erase options  
Page Erase (512/528 bytes)  
Block Erase (4KB)  
Sector Erase (64KB)  
Chip Erase (32-Mbits)  
Program and Erase Suspend/Resume  
Advanced hardware and software data protection features  
Individual sector protection  
Individual sector lockdown to make any sector permanently read-only  
128-byte, One-Time Programmable (OTP) Security Register  
64 bytes factory programmed with a unique identifier  
64 bytes user programmable  
Hardware and software controlled reset options  
JEDEC Standard Manufacturer and Device ID Read  
Low-power dissipation  
400nA Ultra-Deep Power-Down current (typical)  
3μA Deep Power-Down current (typical)  
25μA Standby current (typical)  
11mA Active Read current (typical)  
Endurance: 100,000 program/erase cycles per page minimum  
Data retention: 20 years  
Green (Pb/Halide-free/RoHS compliant) packaging options  
8-lead SOIC (0.208" wide)  
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)  
9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)  
8784E–DFLASH–10/2013  

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