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AT45DB321D_12 PDF预览

AT45DB321D_12

更新时间: 2024-11-13 12:51:39
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
51页 2135K
描述
32Mb, 2.5V or 2.7V DataFlash

AT45DB321D_12 数据手册

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AT45DB321D  
32Mb, 2.5V or 2.7V  
DataFlash  
DATASHEET  
Features  
Single 2.5V - 3.6V or 2.7V - 3.6V supply  
RapidSserial interface: 66MHz maximum clock frequency  
SPI compatible modes 0 and 3  
User configurable page size  
512 bytes per page  
528 bytes per page  
Page size can be factory preconfigured for 512 bytes  
Page program operation  
Intelligent programming operation  
8,192 pages (512/528 bytes/page) main memory  
Flexible erase options  
Page erase (512 bytes)  
Block erase (4KB)  
Sector erase (64KB)  
Chip erase (32Mb)  
Two SRAM data buffers (512/528 bytes)  
Allows receiving data while reprogramming the flash array  
Continuous read capability through entire array  
Ideal for code shadowing applications  
Low power dissipation  
7mA active read current ,typical  
25μA standby current, typical  
15μA deep power down, typical  
Hardware and software data protection features  
Individual sector  
Sector lockdown for secure code and data storage  
Individual sector  
Security: 128-byte security register  
64-byte user programmable space  
Unique 64-byte device identifier  
JEDEC standard manufacturer and device ID read  
100,000 program/erase cycles per page, minimum  
Data retention: 20 years  
Industrial temperature range  
Green (Pb/halide-free/RoHS compliant) packaging options  
3597R–DFLASH–11/2012  

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