Datasheet > 存储 > 闪存> AT45DB081D

AT45DB081D

更新时间： 2024-11-27 04:49:51

品牌	Logo	应用领域
爱特美尔 - ATMEL		/
页数	文件大小	规格书
53页	1450K
描述
8-megabit 2.5-volt or 2.7-volt DataFlash

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT45DB081D 数据手册

Features

• Single 2.5V or 2.7V to 3.6V Supply

• RapidS^®Serial Interface: 66 MHz Maximum Clock Frequency

– SPI Compatible Modes 0 and 3

• User Configurable Page Size

– 256 Bytes per Page

– 264 Bytes per Page

• Page Program Operation

– Intelligent Programming Operation

– 4,096 Pages (256/264 Bytes/Page) Main Memory

• Flexible Erase Options

8-megabit

2.5-volt or

2.7-volt

– Page Erase (256 Bytes)

– Block Erase (2 Kbytes)

– Sector Erase (64 Kbytes)

DataFlash^®

– Chip Erase (8 Mbits)

• Two SRAM Data Buffers (256/264 Bytes)

– Allows Receiving of Data while Reprogramming the Flash Array

• Continuous Read Capability through Entire Array

– Ideal for Code Shadowing Applications

• Low-power Dissipation

AT45DB081D

– 7 mA Active Read Current Typical

– 25 µA Standby Current Typical

– 5 µA Deep Power Down Typical

• Hardware and Software Data Protection Features

– Individual Sector

• Sector Lockdown for Secure Code and Data Storage

– Individual Sector

• Security: 128-byte Security Register

– 64-byte User Programmable Space

– Unique 64-byte Device Identifier

• JEDEC Standard Manufacturer and Device ID Read

• 100,000 Program/Erase Cycles Per Page Minimum

• Data Retention – 20 Years

• Industrial Temperature Range

• Green (Pb/Halide-free/RoHS Compliant) Packaging Options

1. Description

The AT45DB081D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a

wide variety of digital voice-, image-, program code- and data-storage applications.

The AT45DB081D supports RapidS serial interface for applications requiring very

high speed operations. RapidS serial interface is SPI compatible for frequencies up to

66 MHz. Its 8,650,752 bits of memory are organized as 4,096 pages of 256 bytes or

264 bytes each. In addition to the main memory, the AT45DB081D also contains two

SRAM buffers of 256/264 bytes each. The buffers allow the receiving of data while a

page in the main Memory is being reprogrammed, as well as writing a continuous

data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-

contained three step read-modify-write operation. Unlike conventional Flash memo-

ries that are accessed randomly with multiple address lines and a parallel interface,

3596E–DFLASH–02/07

12 3 4 5 6 7...53

中文翻译

下载PDF

与AT45DB081D相关器件

型号	品牌	获取价格	描述	数据表
AT45DB081D_07	ATMEL	获取价格	8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D_08	ATMEL	获取价格	8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D_09	ATMEL	获取价格	8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D_13	ADI	获取价格	8-megabit 2.5V or 2.7V DataFlash
AT45DB081D-MU	ADI	获取价格	8-megabit 2.5V or 2.7V DataFlash
AT45DB081D-MU	ATMEL	获取价格	8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D-MU-2.5	ADI	获取价格	8-megabit 2.5V or 2.7V DataFlash
AT45DB081D-MU-2.5	ATMEL	获取价格	8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D-MU-SL954	ADI	获取价格	8-megabit 2.5V or 2.7V DataFlash
AT45DB081D-MU-SL954	ATMEL	获取价格	8-megabit 2.5-volt or 2.7-volt DataFlash

与AT45DB081D相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

AT45DB081D

AT45DB081D 数据手册

与AT45DB081D相关器件

与AT45DB081D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT45DB081D

AT45DB081D 数据手册

与AT45DB081D相关器件

与AT45DB081D相关文章

您还可以找

您在本页遇到什么问题？