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AT45DB041E-SSHN2B-T PDF预览

AT45DB041E-SSHN2B-T

更新时间: 2024-11-24 21:17:39
品牌 Logo 应用领域
爱特美尔 - ATMEL 时钟光电二极管内存集成电路
页数 文件大小 规格书
71页 2420K
描述
Flash, 4MX1, PDSO8, 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8

AT45DB041E-SSHN2B-T 技术参数

生命周期:Transferred零件包装代码:SOIC
包装说明:0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.56
最大时钟频率 (fCLK):70 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.925 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:1功能数量:1
端子数量:8字数:4194304 words
字数代码:4000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX1封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
编程电压:2.7 V座面最大高度:1.75 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
类型:NOR TYPE宽度:3.9 mm
Base Number Matches:1

AT45DB041E-SSHN2B-T 数据手册

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Atmel AT45DB041E  
4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum  
SPI Serial Flash Memory  
ADVANCE DATASHEET  
Features  
Single 1.65V - 3.6V supply  
Serial Peripheral Interface (SPI) compatible  
Supports SPI modes 0 and 3  
Supports Atmel® RapidSoperation  
Continuous read capability through entire array  
Up to 85MHz  
Low-power read option up to 20MHz  
Clock-to-output time (tV) of 6ns maximum  
User configurable page size  
256 bytes per page  
264 bytes per page (default)  
Page size can be factory pre-configured for 256 bytes  
Two fully independent SRAM data buffers (256/264 bytes)  
Allows receiving data while reprogramming the main memory array  
Flexible programming options  
Byte/Page Program (1 to 256/264 bytes) directly into main memory  
Buffer Write  
Buffer to Main Memory Page Program  
Flexible erase options  
Page Erase (256/264 bytes)  
Block Erase (2KB)  
Sector Erase (64KB)  
Chip Erase (4-Mbits)  
Program and Erase Suspend/Resume  
Advanced hardware and software data protection features  
Individual sector protection  
Individual sector lockdown to make any sector permanently read-only  
128-byte, One-Time Programmable (OTP) Security Register  
64 bytes factory programmed with a unique identifier  
64 bytes user programmable  
Hardware and software controlled reset options  
JEDEC Standard Manufacturer and Device ID Read  
Low-power dissipation  
500nA Ultra-Deep Power-Down current (typical)  
3μA Deep Power-Down current (typical)  
25μA Standby current (typical at 20MHz)  
11mA Active Read current (typical)  
Endurance: 100,000 program/erase cycles per page minimum  
Data retention: 20 years  
Complies with full industrial temperature range  
Green (Pb/Halide-free/RoHS compliant) packaging options  
8-lead SOIC (0.150" wide and 0.208" wide)  
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)  
9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)  
8783A–DFLASH–9/2012  

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