Datasheet > AT45DB041E-MHN2B-T

AT45DB041E-MHN2B-T

更新时间： 2024-11-24 12:34:51

品牌	Logo	应用领域
其他 - ETC		闪存
页数	文件大小	规格书
71页	2898K
描述
4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum SPI Serial Flash Memory

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AT45DB041E

4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum

SPI Serial Flash Memory

Features



Single 1.65V - 3.6V supply

Serial Peripheral Interface (SPI) compatible

 Supports SPI modes 0 and 3

 Supports RapidS^™operation



Continuous read capability through entire array

 Up to 85MHz

 Low-power read option up to 15 MHz

 Clock-to-output time (t_V) of 6ns maximum

User configurable page size

 256 bytes per page

 264 bytes per page (default)

 Page size can be factory pre-configured for 256 bytes



Two fully independent SRAM data buffers (256/264 bytes)

 Allows receiving data while reprogramming the main memory array

Flexible programming options

 Byte/Page Program (1 to 256/264 bytes) directly into main memory

 Buffer Write

 Buffer to Main Memory Page Program



Flexible erase options

 Page Erase (256/264 bytes)

 Block Erase (2KB)

 Sector Erase (64KB)

 Chip Erase (4-Mbits)



Program and Erase Suspend/Resume

 Advanced hardware and software data protection features

 Individual sector protection

 Individual sector lockdown to make any sector permanently read-only



128-byte, One-Time Programmable (OTP) Security Register

 64 bytes factory programmed with a unique identifier

 64 bytes user programmable



Hardware and software controlled reset options

JEDEC Standard Manufacturer and Device ID Read

Low-power dissipation

 400nA Ultra-Deep Power-Down current (typical)

 3μA Deep Power-Down current (typical)

 25μA Standby current (typical at 20MHz)

 11mA Active Read current (typical)



Endurance: 100,000 program/erase cycles per page minimum

Data retention: 20 years

Complies with full industrial temperature range

Green (Pb/Halide-free/RoHS compliant) packaging options

 8-lead SOIC (0.150" wide and 0.208" wide)

 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

 9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)

8783F–DFLASH–10/2013

12 3 4 5 6 7...71

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与AT45DB041E-MHN2B-T相关器件

型号	品牌	获取价格	描述	数据表
AT45DB041E-MHN2B-Y	ETC	获取价格	4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum SPI Serial Flash Memory
AT45DB041E-MHN-T	ATMEL	获取价格	Flash, 4MX1, PDSO8, 5 X 6 MM, 0.60 MM HEIGHT, GREEN, PLASTIC, MO-229, UDFN-8
AT45DB041E-SHN2B-B	ETC	获取价格	4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum SPI Serial Flash Memory
AT45DB041E-SHN2B-T	ETC	获取价格	4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum SPI Serial Flash Memory
AT45DB041E-SHN2B-Y	ETC	获取价格	4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum SPI Serial Flash Memory
AT45DB041E-SHN-B	ATMEL	获取价格	Flash, 4MX1, PDSO8, 0.208 INCH, GREEN, PLASTIC, SOIC-8
AT45DB041E-SHNHT-B	DIALOG	获取价格	4-Mbit, 1.65V Minimum SPI DataFlashÂ® Memory
AT45DB041E-SHNHT-T	DIALOG	获取价格	4-Mbit, 1.65V Minimum SPI DataFlashÂ® Memory
AT45DB041E-SHN-T	ATMEL	获取价格	Flash, 4MX1, PDSO8, 0.208 INCH, GREEN, PLASTIC, SOIC-8
AT45DB041E-SSHN2B-B	ETC	获取价格	4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum SPI Serial Flash Memory

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