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AT45DB041B-CNI PDF预览

AT45DB041B-CNI

更新时间: 2024-11-24 04:49:51
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
35页 489K
描述
4-megabit 2.5-volt or 2.7-volt DataFlash

AT45DB041B-CNI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SON包装说明:VSON, SOLCC8,.3
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.8其他特性:ORGANIZED AS 2048 PAGES OF 264 BYTES EACH
最大时钟频率 (fCLK):20 MHzJESD-30 代码:R-XDSO-N8
JESD-609代码:e0长度:8 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:1湿度敏感等级:3
功能数量:1端子数量:8
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX1
封装主体材料:UNSPECIFIED封装代码:VSON
封装等效代码:SOLCC8,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):240电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.01 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:6 mm
写保护:HARDWAREBase Number Matches:1

AT45DB041B-CNI 数据手册

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Features  
Single 2.5V - 3.6V or 2.7V - 3.6V Supply  
Serial Peripheral Interface (SPI) Compatible  
20 MHz Max Clock Frequency  
Page Program Operation  
– Single Cycle Reprogram (Erase and Program)  
– 2048 Pages (264 Bytes/Page) Main Memory  
Supports Page and Block Erase Operations  
Two 264-byte SRAM Data Buffers – Allows Receiving of Data  
while Reprogramming the Flash Memory Array  
Continuous Read Capability through Entire Array  
– Ideal for Code Shadowing Applications  
Low Power Dissipation  
4-megabit  
2.5-volt or  
2.7-volt  
– 4 mA Active Read Current Typical  
DataFlash®  
– 2 µA CMOS Standby Current Typical  
Hardware Data Protection Feature  
5.0V-tolerant Inputs: SI, SCK, CS, RESET, and WP Pins  
Commercial and Industrial Temperature Ranges  
Green (Pb/Halide-free/RoHS Compliant) Package Options  
AT45DB041B  
1. Description  
The AT45DB041B is an SPI compatible serial interface Flash memory ideally suited  
for a wide variety of digital voice-, image-, program code- and data-storage applica-  
tions. Its 4,325,376 bits of memory are organized as 2048 pages of 264 bytes each. In  
addition to the main memory, the AT45DB041B also contains two SRAM data buffers  
of 264 bytes each.  
The buffers allow receiving of data while a page in the main memory is being repro-  
grammed, as well as reading or writing a continuous data stream. EEPROM emulation  
(bit or byte alterability) is easily handled with a self-contained three step Read-Modify-  
Write operation. Unlike conventional Flash memories that are accessed randomly with  
multiple address lines and a parallel interface, the DataFlash uses a SPI serial inter-  
face to sequentially access its data. DataFlash supports SPI mode 0 and mode 3. The  
simple serial interface facilitates hardware layout, increases system reliability, mini-  
mizes switching noise, and reduces package size and active pin count. The device is  
optimized for use in many commercial and industrial applications where high density,  
low pin count, low voltage, and low power are essential. The device operates at clock  
frequencies up to 20 MHz with a typical active read current consumption of 4 mA.  
To allow for simple in-system reprogrammability, the AT45DB041B does not require  
high input voltages for programming. The device operates from a single power supply,  
2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The  
AT45DB041B is enabled through the chip select pin (CS) and accessed via a three-  
wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial  
Clock (SCK).  
All programming cycles are self-timed, and no separate erase cycle is required before  
programming.  
3443C–DFLSH–5/05  

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