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AT451984 PDF预览

AT451984

更新时间: 2024-11-29 18:33:35
品牌 Logo 应用领域
ASI 二极管变容二极管
页数 文件大小 规格书
3页 119K
描述
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 45V, Silicon, Abrupt,

AT451984 技术参数

生命周期:Active包装说明:O-CEMW-N2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
Is Samacsys:N最小击穿电压:45 V
二极管电容容差:10%最小二极管电容比:6.4
标称二极管电容:33 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码:O-CEMW-N2端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:MICROWAVE认证状态:Not Qualified
最小质量因数:800表面贴装:YES
端子形式:NO LEAD端子位置:END
变容二极管分类:ABRUPTBase Number Matches:1

AT451984 数据手册

 浏览型号AT451984的Datasheet PDF文件第2页浏览型号AT451984的Datasheet PDF文件第3页 

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