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AT302015 PDF预览

AT302015

更新时间: 2024-11-05 16:31:35
品牌 Logo 应用领域
ASI 二极管变容二极管
页数 文件大小 规格书
3页 119K
描述
Variable Capacitance Diode, Very High Frequency, 39pF C(T), 30V, Silicon, Abrupt, DO-7,

AT302015 技术参数

生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.62
最小击穿电压:30 V外壳连接:ISOLATED
配置:SINGLE二极管电容容差:10%
最小二极管电容比:4.7标称二极管电容:39 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:VERY HIGH FREQUENCYJEDEC-95代码:DO-7
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最小质量因数:1000
表面贴装:NO端子形式:WIRE
端子位置:AXIAL变容二极管分类:ABRUPT
Base Number Matches:1

AT302015 数据手册

 浏览型号AT302015的Datasheet PDF文件第2页浏览型号AT302015的Datasheet PDF文件第3页 

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