生命周期: | Active | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.69 |
最小击穿电压: | 30 V | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管电容容差: | 10% |
最小二极管电容比: | 4.7 | 标称二极管电容: | 33 pF |
二极管元件材料: | SILICON | 二极管类型: | VARIABLE CAPACITANCE DIODE |
频带: | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | JEDEC-95代码: | DO-7 |
JESD-30 代码: | O-LALF-W2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
认证状态: | Not Qualified | 最小质量因数: | 1400 |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | AXIAL | 变容二极管分类: | ABRUPT |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AT301920 | ASI |
获取价格 |
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, S | |
AT301921 | ASI |
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Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, S | |
AT301931 | ASI |
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Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, S | |
AT301983 | ASI |
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Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, S | |
AT301984 | ASI |
获取价格 |
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, S | |
AT302 | POSEICO |
获取价格 |
PHASE CONTROL THYRISTOR | |
AT-302 | ETC |
获取价格 |
Voltage Variable Absorptive Attenuator, 19 dB | |
AT3020 | ASI |
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Variable Capacitance Diode, Very High Frequency, 39pF C(T), 30V, Silicon, Abrupt, | |
AT302001 | ASI |
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Variable Capacitance Diode, Very High Frequency, 39pF C(T), 30V, Silicon, Abrupt, | |
AT302010 | ASI |
获取价格 |
Variable Capacitance Diode, Very High Frequency, 39pF C(T), 30V, Silicon, Abrupt, |