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AT29LV256-25JC PDF预览

AT29LV256-25JC

更新时间: 2024-11-07 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路
页数 文件大小 规格书
10页 452K
描述
256K 32K x 8 3-volt Only CMOS Flash Memory

AT29LV256-25JC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:QCCJ, LDCC32,.5X.6
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.85Is Samacsys:N
最长访问时间:250 ns其他特性:AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION
命令用户界面:NO数据轮询:YES
JESD-30 代码:R-PQCC-J32JESD-609代码:e0
长度:13.97 mm内存密度:262144 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:2功能数量:1
部门数/规模:512端子数量:32
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
页面大小:64 words并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:3.56 mm部门规模:64
最大待机电流:0.00002 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:11.43 mm最长写入周期时间 (tWC):20 ms
Base Number Matches:1

AT29LV256-25JC 数据手册

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AT29LV256  
Features  
Single Supply Voltage, Range 3V to 3.6V  
3-Volt-Only Read and Write Operation  
Software Protected Programming  
Low Power Dissipation  
15 mA Active Current  
20 µA CMOS Standby Current  
Fast Read Access Time - 200 ns  
Sector Program Operation  
Single Cycle Reprogram (Erase and Program)  
512 Sectors (64 bytes/sector)  
256K (32K x 8)  
3-volt Only  
CMOS Flash  
Memory  
Internal Address and Data Latches for 64-Bytes  
Fast Sector Program Cycle Time - 20 ms Max.  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Description  
The AT29LV256 is a 3-volt-only in-system Flash Programmable Erasable Read Only  
Memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 200 ns with power dissipation of just 54 mW over the commercial  
temperature range. When the device is deselected, the CMOS standby current is less  
than 20 µA. The device endurance is such that any sector can typically be written to  
in excess of 10,000 times.  
(continued)  
PLCC Top View  
AT29LV256  
Pin Configurations  
Pin Name Function  
A0 - A14  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC  
DC  
No Connect  
Don’t Connect  
TSOP Top View  
Type 1  
0563A  
4-33  

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