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AT29LV010A-20JC PDF预览

AT29LV010A-20JC

更新时间: 2024-11-07 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
10页 494K
描述
1 Megabit 128K x 8 3-volt Only CMOS Flash

AT29LV010A-20JC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ, LDCC32,.5X.6针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
最长访问时间:200 ns命令用户界面:NO
数据轮询:YESJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:2
功能数量:1部门数/规模:1K
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:3.56 mm部门规模:128
最大待机电流:0.00004 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:11.43 mm最长写入周期时间 (tWC):20 ms
Base Number Matches:1

AT29LV010A-20JC 数据手册

 浏览型号AT29LV010A-20JC的Datasheet PDF文件第2页浏览型号AT29LV010A-20JC的Datasheet PDF文件第3页浏览型号AT29LV010A-20JC的Datasheet PDF文件第4页浏览型号AT29LV010A-20JC的Datasheet PDF文件第5页浏览型号AT29LV010A-20JC的Datasheet PDF文件第6页浏览型号AT29LV010A-20JC的Datasheet PDF文件第7页 
AT29LV010A  
Features  
Single Supply Voltage, Range 3V to 3.6V  
3-Volt-Only Read and Write Operation  
Software Protected Programming  
Fast Read Access Time - 150 ns  
Low Power Dissipation  
15 mA Active Current  
20 µA CMOS Standby Current  
Sector Program Operation  
Single Cycle Reprogram (Erase and Program)  
1024 Sectors (128 bytes/sector)  
1 Megabit  
Internal Address and Data Latches for 128-Bytes  
Two 8 KB Boot Blocks with Lockout  
Fast Sector Program Cycle Time - 20 ms  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
(128K x 8)  
3-volt Only  
CMOS Flash  
Commercial and Industrial Temperature Ranges  
Description  
The AT29LV010A is a 3-volt-only in-system Flash programmable and erasable read  
only memory (Flash). Its 1 megabit of memory is organized as 131,072 bytes by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 150 ns with power dissipation of just 54 mW over the commercial  
temperature range. When the device is deselected, the CMOS standby current is less  
than 20 µA. The device endurance is such that any sector can typically be written to  
in excess of 10,000 times.  
To allow for simple in-system reprogrammability, the AT29LV010A does not require  
high input voltages for programming. Three-volt-only commands determine the opera-  
tion of the device. Reading data out of the device is similar to reading from an  
EPROM. Reprogramming the AT29LV010A is performed on a sector basis; 128-bytes  
of data are loaded into the device and then simultaneously programmed.  
AT29LV010A  
(continued)  
Pin Configurations  
Pin Name Function  
PLCC Top View  
A0 - A16  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC No Connect  
TSOP Top View  
Type 1  
0520B  
4-53  

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