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AT29LV010A-12JI PDF预览

AT29LV010A-12JI

更新时间: 2024-11-24 12:28:35
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
16页 721K
描述
1-megabit (128K x 8) 3-volt Only Flash Memory

AT29LV010A-12JI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ, LDCC32,.5X.6针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:8.77
最长访问时间:120 ns命令用户界面:NO
数据轮询:YESJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:2
功能数量:1部门数/规模:1K
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:3.56 mm
部门规模:128最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:11.43 mm
最长写入周期时间 (tWC):20 msBase Number Matches:1

AT29LV010A-12JI 数据手册

 浏览型号AT29LV010A-12JI的Datasheet PDF文件第2页浏览型号AT29LV010A-12JI的Datasheet PDF文件第3页浏览型号AT29LV010A-12JI的Datasheet PDF文件第4页浏览型号AT29LV010A-12JI的Datasheet PDF文件第5页浏览型号AT29LV010A-12JI的Datasheet PDF文件第6页浏览型号AT29LV010A-12JI的Datasheet PDF文件第7页 
Features  
Single Supply Voltage, Range 3V to 3.6V  
3-volt Only Read and Write Operation  
Software Protected Programming  
Fast Read Access Time – 120 ns  
Low Power Dissipation  
– 15 mA Active Current  
– 40 µA CMOS Standby Current  
Sector Program Operation  
1-megabit  
(128K x 8)  
3-volt Only  
Flash Memory  
– Single Cycle Reprogram (Erase and Program)  
– 1024 Sectors (128 Bytes/Sector)  
– Internal Address and Data Latches for 128 Bytes  
Two 8K Bytes Boot Blocks with Lockout  
Fast Sector Program Cycle Time – 20 ms  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
AT29LV010A  
Not Recommended  
for New Design  
Use AT29BV010A  
Contact Atmel to discuss  
the latest design in trends  
and options  
1. Description  
The AT29LV010A is a 3-volt only in-system Flash programmable and erasable read  
only memory (Flash). Its 1 megabit of memory is organized as 131,072 bytes by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 120 ns with power dissipation of just 54 mW over the commercial tem-  
perature range. When the device is deselected, the CMOS standby current is less  
than 40 µA. The device endurance is such that any sector can typically be written to in  
excess of 10,000 times.  
To allow for simple in-system reprogrammability, the AT29LV010A does not require  
high input voltages for programming. Three-volt-only commands determine the opera-  
tion of the device. Reading data out of the device is similar to reading from an  
EPROM. Reprogramming the AT29LV010A is performed on a sector basis; 128 bytes  
of data are loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 128 bytes of data are captured at  
microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automati-  
cally erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
0520F–FLASH–9/08  

AT29LV010A-12JI 替代型号

型号 品牌 替代类型 描述 数据表
AT29LV010A-12JC ATMEL

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