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AT29C512-12PC PDF预览

AT29C512-12PC

更新时间: 2024-11-07 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
18页 285K
描述
512K 64K x 8 5-volt Only CMOS Flash Memory

AT29C512-12PC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP32,.6
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.79Is Samacsys:N
最长访问时间:120 ns其他特性:AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION
命令用户界面:NO数据轮询:YES
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PDIP-T32
JESD-609代码:e0长度:42.037 mm
内存密度:524288 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:512端子数量:32
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:IN-LINE
页面大小:128 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:4.826 mm部门规模:128
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:15.24 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT29C512-12PC 数据手册

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Features  
Fast Read Access Time – 70 ns  
5-volt Only Reprogramming  
Sector Program Operation  
– Single Cycle Reprogram (Erase and Program)  
– 512 Sectors (128 Bytes/Sector)  
– Internal Address and Data Latches for 128 Bytes  
Internal Program Control and Timer  
Hardware and Software Data Protection  
Fast Sector Program Cycle Time – 10 ms  
DATA Polling for End of Program Detection  
Low Power Dissipation  
512K (64K x 8)  
5-volt Only  
Flash Memory  
– 50 mA Active Current  
– 100 µA CMOS Standby Current  
Typical Endurance > 10,000 Cycles  
Single 5V 10ꢀ Supply  
AT29C512  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Green (Pb/Halide-free) Packaging Option  
1. Description  
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only  
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-  
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 70 ns with power dissipation of just 275 mW over the commercial tem-  
perature range. When the device is deselected, the CMOS standby current is less  
than 100 µA. The device endurance is such that any sector can typically be written to  
in excess of 10,000 times.  
To allow for simple in-system reprogrammability, the AT29C512 does not require high  
input voltages for programming. Five-volt-only commands determine the operation of  
the device. Reading data out of the device is similar to reading from an EPROM.  
Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are  
loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 128 bytes of data are internally  
latched, freeing the address and data bus for other operations. Following the initiation  
of a program cycle, the device will automatically erase the sector and then program  
the latched data using an internal control timer. The end of a program cycle can be  
detected by DATA polling of I/O7. Once the end of a program cycle has been  
detected, a new access for a read or program can begin.  
0456H–FLASH–2/05  

AT29C512-12PC 替代型号

型号 品牌 替代类型 描述 数据表
AT29C512-12PI ATMEL

完全替代

512K 64K x 8 5-volt Only CMOS Flash Memory
AT29C512-70PC ATMEL

类似代替

512K 64K x 8 5-volt Only CMOS Flash Memory
AT29C512-15PC ATMEL

类似代替

512K 64K x 8 5-volt Only CMOS Flash Memory

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AT29C512-12TU ATMEL

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512K (64K x 8) 5-volt Only Flash Memory