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AT29C432-12TI PDF预览

AT29C432-12TI

更新时间: 2024-11-23 22:39:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路光电二极管异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
11页 317K
描述
4 Megabit 5-volt Flash with 256K E2PROM Memory

AT29C432-12TI 技术参数

生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSOP1,针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
Is Samacsys:N最长访问时间:120 ns
其他特性:HARDWARE DATA PROTECTION; 10000 DATA MEMORY ENDURANCE; BUILT-IN 32K X 8 EEPROM耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G40长度:18.4 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:40字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:10 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT29C432-12TI 数据手册

 浏览型号AT29C432-12TI的Datasheet PDF文件第2页浏览型号AT29C432-12TI的Datasheet PDF文件第3页浏览型号AT29C432-12TI的Datasheet PDF文件第4页浏览型号AT29C432-12TI的Datasheet PDF文件第5页浏览型号AT29C432-12TI的Datasheet PDF文件第6页浏览型号AT29C432-12TI的Datasheet PDF文件第7页 
Features  
ConcurrentFlash Memory  
Unique Architecture Allows the Flash Array  
To Be Read During the E2PROM Write Cycle  
4 Megabit 5-volt Flash  
Configured as a 512K x 8 Memory Array  
120 ns Read Access Time  
Sector Program Operation  
Single Cycle Reprogram (No Erase Necessary)  
2048 Sectors, 256-Bytes Wide  
10 ms Sector Rewrite  
4 Megabit  
JEDEC Standard Software Data Protection  
256K bit Full Feature E2PROM  
5-volt Flash with  
256K E2PROM  
Memory  
Configured as a 32K x 8 Memory Array  
Byte or Page (16 bytes) Write Capability  
Write Cycle Time: 10 ms  
JEDEC Standard Software Data Protection  
Pinout Similar to 32-Pin 4 Mb Flash  
Data Memory Endurance: 10,000 cycles  
Description  
AT29C432  
ConcurrentFlash  
The AT29C432 is a CMOS memory specifically designed for applications requiring  
both a high density nonvolatile program memory and a smaller nonvolatile data mem-  
ory. The AT29C432 provides this in the form of a 4 megabit Flash array integrated  
2
with a 256K bit full featured E PROM array on the same device. A unique feature of  
this device is its concurrent read while writing capability. This provides the host sys-  
tem read access to the Flash program memory during the write cycle time of the  
E PROM.  
2
Preliminary  
The two memory arrays share all I/O lines, Address lines and OE and WE inputs.  
Each memory array has its own Chip Enable input: CEF for the Flash array and CEE  
2
for the E PROM array.  
Additionally, Software Data Protection has been independently implemented for both  
arrays and is always enabled. The AT29C432 has a pinout similar to the AT29C040A  
Flash memory. A system designer using a Flash memory for program storage and  
another smaller, non volatile memory for data storage can easily replace both memo-  
ries with the AT29C432.  
TSOP  
Type 1  
Pin Configurations  
Pin Name Function  
A0 - A18  
OE  
Addresses  
Output Enable  
Write Enable  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
CEE  
CEF  
NC  
Chip Enable E2PROM  
Chip Enable Flash  
No Connect  

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