Datasheet > AT29C257

AT29C257

更新时间： 2024-09-19 22:53:59

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存
页数	文件大小	规格书
12页	565K
描述
256K 32K x 8 5-volt Only CMOS Flash Memory

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中文翻译

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AT29C257 数据手册

AT29C257

Features

Fast Read Access Time - 70 ns

5-Volt-Only Reprogramming

Page Program Operation

•

Single Cycle Reprogram (Erase and Program)

Internal Address and Data Latches for 64-Bytes

Internal Program Control and Timer

Hardware and Software Data Protection

Fast Program Cycle Times

•

Page (64-Byte) Program Time - 10 ms

Chip Erase Time - 10 ms

256K (32K x 8)

5-volt Only

CMOS Flash

Memory

DATA Polling for End of Program Detection

Low Power Dissipation

50 mA Active Current

300 µA CMOS Standby Current

Typical Endurance > 10,000 Cycles

Single 5V ± 10% Supply

•

CMOS and TTL Compatible Inputs and Outputs

Pin-Compatible with AT29C010A and AT29C512 for Easy System Upgrades

•

Description

The AT29C257 is a 5-volt-only in-system Flash programmable and erasable read only

memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manu-

factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-

cess times to 70 ns with power dissipation of just 275 mW. When the device is dese-

lected, the CMOS standby current is less than 300 µA. The device endurance is such

that any sector can typically be written to in excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29C257 does not require high

input voltages for programming. Five-volt-only commands determine the operation of

the device. Reading data out of the device is similar to reading from a static RAM.

Reprogramming the AT29C257 is performed on a page basis; 64-bytes of data are

loaded into the device and then simultaneously programmed. The contents of the

entire device may be erased by using a 6-byte software code (although erasure before

programming is not needed).

AT29C257

During a reprogram cycle, the address locations and 64-bytes of data are internally

latched, freeing the address and data bus for other operations. Following the initiation

of a program cycle, the device will automatically erase the page and then program the

latched data using an internal control timer. The end of a program cycle can be de-

tected by DATA polling of I/O7. Once the end of a program cycle has been detected

a new access for a read, program or chip erase can begin.

Pin Configurations

PLCC Top View

Pin Name Function

A0 - A14

Addresses

Chip Enable

Output Enable

Write Enable

I/O0 - I/O7 Data Inputs/Outputs

No Connect

Don’t Connect

0012K

4-105

12 3 4 5 6 7...12

中文翻译

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与AT29C257相关器件

型号	品牌	获取价格	描述	数据表
AT29C257-12	ATMEL	获取价格	256K 32K x 8 5-volt Only CMOS Flash Memory
AT29C257-12DC	ETC	获取价格	x8 Flash EEPROM
AT29C257-12DI	ETC	获取价格	x8 Flash EEPROM
AT29C257-12DM	ETC	获取价格	x8 Flash EEPROM
AT29C257-12DM/883	ETC	获取价格	x8 Flash EEPROM
AT29C257-12JC	ATMEL	获取价格	256K 32K x 8 5-volt Only CMOS Flash Memory
AT29C257-12JCT/R	ATMEL	获取价格	Flash, 32KX8, 120ns, PQCC32, PLASTIC, LCC-32
AT29C257-12JI	ATMEL	获取价格	256K 32K x 8 5-volt Only CMOS Flash Memory
AT29C257-12JIT/R	ATMEL	获取价格	Flash, 32KX8, 120ns, PQCC32, PLASTIC, LCC-32
AT29C257-12LC	ETC	获取价格	x8 Flash EEPROM

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