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AT29C257-12JC PDF预览

AT29C257-12JC

更新时间: 2024-11-23 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存
页数 文件大小 规格书
12页 565K
描述
256K 32K x 8 5-volt Only CMOS Flash Memory

AT29C257-12JC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:QCCJ, LDCC32,.5X.6
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.88最长访问时间:120 ns
其他特性:HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE命令用户界面:NO
数据轮询:YES耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PQCC-J32JESD-609代码:e0
长度:13.97 mm内存密度:262144 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:2功能数量:1
端子数量:32字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:3.56 mm
最大待机电流:0.0003 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:11.43 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT29C257-12JC 数据手册

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AT29C257  
Features  
Fast Read Access Time - 70 ns  
5-Volt-Only Reprogramming  
Page Program Operation  
Single Cycle Reprogram (Erase and Program)  
Internal Address and Data Latches for 64-Bytes  
Internal Program Control and Timer  
Hardware and Software Data Protection  
Fast Program Cycle Times  
Page (64-Byte) Program Time - 10 ms  
Chip Erase Time - 10 ms  
256K (32K x 8)  
5-volt Only  
CMOS Flash  
Memory  
DATA Polling for End of Program Detection  
Low Power Dissipation  
50 mA Active Current  
300 µA CMOS Standby Current  
Typical Endurance > 10,000 Cycles  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
Pin-Compatible with AT29C010A and AT29C512 for Easy System Upgrades  
Description  
The AT29C257 is a 5-volt-only in-system Flash programmable and erasable read only  
memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manu-  
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-  
cess times to 70 ns with power dissipation of just 275 mW. When the device is dese-  
lected, the CMOS standby current is less than 300 µA. The device endurance is such  
that any sector can typically be written to in excess of 10,000 times.  
To allow for simple in-system reprogrammability, the AT29C257 does not require high  
input voltages for programming. Five-volt-only commands determine the operation of  
the device. Reading data out of the device is similar to reading from a static RAM.  
Reprogramming the AT29C257 is performed on a page basis; 64-bytes of data are  
loaded into the device and then simultaneously programmed. The contents of the  
entire device may be erased by using a 6-byte software code (although erasure before  
programming is not needed).  
AT29C257  
During a reprogram cycle, the address locations and 64-bytes of data are internally  
latched, freeing the address and data bus for other operations. Following the initiation  
of a program cycle, the device will automatically erase the page and then program the  
latched data using an internal control timer. The end of a program cycle can be de-  
tected by DATA polling of I/O7. Once the end of a program cycle has been detected  
a new access for a read, program or chip erase can begin.  
Pin Configurations  
PLCC Top View  
Pin Name Function  
A0 - A14  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC  
DC  
No Connect  
Don’t Connect  
0012K  
4-105  

AT29C257-12JC 替代型号

型号 品牌 替代类型 描述 数据表
AT29C257-12JI ATMEL

完全替代

256K 32K x 8 5-volt Only CMOS Flash Memory
AT29C256-12JI ATMEL

完全替代

256K (32K x 8) 5-volt Only Flash Memory
AT29C256-12JC ATMEL

完全替代

256K (32K x 8) 5-volt Only Flash Memory

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