5秒后页面跳转
AT29C256-90TCT/R PDF预览

AT29C256-90TCT/R

更新时间: 2024-11-24 13:01:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存
页数 文件大小 规格书
17页 351K
描述
Flash, 32KX8, 90ns, PDSO28, PLASTIC, TSOP-28

AT29C256-90TCT/R 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:PLASTIC, TSOP-28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.88
最长访问时间:90 ns其他特性:AUTOMATIC WRITE
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:11.8 mm内存密度:262144 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
编程电压:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

AT29C256-90TCT/R 数据手册

 浏览型号AT29C256-90TCT/R的Datasheet PDF文件第2页浏览型号AT29C256-90TCT/R的Datasheet PDF文件第3页浏览型号AT29C256-90TCT/R的Datasheet PDF文件第4页浏览型号AT29C256-90TCT/R的Datasheet PDF文件第5页浏览型号AT29C256-90TCT/R的Datasheet PDF文件第6页浏览型号AT29C256-90TCT/R的Datasheet PDF文件第7页 
Features  
Fast Read Access Time – 70 ns  
5-volt Only Reprogramming  
Page Program Operation  
– Single Cycle Reprogram (Erase and Program)  
– Internal Address and Data Latches for 64 Bytes  
Internal Program Control and Timer  
Hardware and Software Data Protection  
Fast Program Cycle Times  
– Page (64 Byte) Program Time – 10 ms  
– Chip Erase Time – 10 ms  
DATA Polling for End of Program Detection  
256K (32K x 8)  
5-volt Only  
Flash Memory  
Low-power Dissipation  
– 50 mA Active Current  
– 300 µA CMOS Standby Current  
Typical Endurance > 10,000 Cycles  
Single 5V 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
AT29C256  
Description  
The AT29C256 is a five-volt-only in-system Flash programmable and erasable read  
only memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 70 ns with power dissipation of just 275 mW. When the device is  
deselected, the CMOS standby current is less than 300 µA. The device endurance is  
such that any sector can typically be written to in excess of 10,000 times.  
TSOP Top View  
Pin Configurations  
Type 1  
Pin Name  
A0 - A14  
CE  
Function  
Addresses  
OE  
A11  
A9  
22  
23  
24  
25  
26  
27  
28  
1
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
A10  
CE  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
A8  
OE  
A13  
A14  
VCC  
WE  
A12  
A7  
WE  
I/O0 - I/O7  
NC  
2
3
A6  
4
A5  
5
A4  
6
A1  
DC  
Don’t Connect  
A3  
7
8
A2  
PLCC and LCC Top View  
A6  
A5  
A4  
A3  
A2  
5
6
7
8
9
29 A8  
28 A9  
27 A11  
26 NC  
25 OE  
24 A10  
23 CE  
22 I/O7  
21 I/O6  
A1 10  
A0 11  
NC 12  
I/O0 13  
Note:  
PLCC package pins 1 and 17 are  
DON’T CONNECT.  
Rev. 0046P–FLASH–10/04  

与AT29C256-90TCT/R相关器件

型号 品牌 获取价格 描述 数据表
AT29C256-90TI ATMEL

获取价格

256K (32K x 8) 5-volt Only Flash Memory
AT29C256-90TIT/R ATMEL

获取价格

Flash, 32KX8, 90ns, PDSO28, PLASTIC, TSOP-28
AT29C257 ATMEL

获取价格

256K 32K x 8 5-volt Only CMOS Flash Memory
AT29C257-12 ATMEL

获取价格

256K 32K x 8 5-volt Only CMOS Flash Memory
AT29C257-12DC ETC

获取价格

x8 Flash EEPROM
AT29C257-12DI ETC

获取价格

x8 Flash EEPROM
AT29C257-12DM ETC

获取价格

x8 Flash EEPROM
AT29C257-12DM/883 ETC

获取价格

x8 Flash EEPROM
AT29C257-12JC ATMEL

获取价格

256K 32K x 8 5-volt Only CMOS Flash Memory
AT29C257-12JCT/R ATMEL

获取价格

Flash, 32KX8, 120ns, PQCC32, PLASTIC, LCC-32