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AT29C010A-70PC PDF预览

AT29C010A-70PC

更新时间: 2024-11-18 22:25:47
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存
页数 文件大小 规格书
12页 731K
描述
1 Megabit 128K x 8 5-volt Only CMOS Flash Memory

AT29C010A-70PC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.600 INCH, PLASTIC, DIP-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.66最长访问时间:70 ns
启动块:BOTTOM/TOP命令用户界面:NO
数据轮询:YESJESD-30 代码:R-PDIP-T32
JESD-609代码:e0长度:42.037 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1,1,1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:4.826 mm
部门规模:8K,112K,8K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:15.24 mm
最长写入周期时间 (tWC):10 ms

AT29C010A-70PC 数据手册

 浏览型号AT29C010A-70PC的Datasheet PDF文件第2页浏览型号AT29C010A-70PC的Datasheet PDF文件第3页浏览型号AT29C010A-70PC的Datasheet PDF文件第4页浏览型号AT29C010A-70PC的Datasheet PDF文件第5页浏览型号AT29C010A-70PC的Datasheet PDF文件第6页浏览型号AT29C010A-70PC的Datasheet PDF文件第7页 
AT29C010A  
Features  
Fast Read Access Time - 70 ns  
5-Volt-Only Reprogramming  
Sector Program Operation  
Single Cycle Reprogram (Erase and Program)  
1024 Sectors (128 bytes/sector)  
Internal Address and Data Latches for 128-Bytes  
Two 8 KB Boot Blocks with Lockout  
Internal Program Control and Timer  
Hardware and Software Data Protection  
Fast Sector Program Cycle Time - 10 ms  
DATA Polling for End of Program Detection  
Low Power Dissipation  
1 Megabit  
(128K x 8)  
5-volt Only  
CMOS Flash  
Memory  
50 mA Active Current  
100 µA CMOS Standby Current  
Typical Endurance > 10,000 Cycles  
Single 5V ±10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Description  
The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read  
only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8  
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device  
offers access times to 70 ns with power dissipation of just 275 mW over the commer-  
cial temperature range. When the device is deselected, the CMOS standby current is  
less than 100 µA. The device endurance is such that any sector can typically be writ-  
ten to in excess of 10,000 times.  
To allow for simple in-system reprogrammability, the AT29C010A does not require  
high input voltages for programming. Five-volt-only commands determine the opera-  
AT29C010A  
(continued)  
Pin Configurations  
DIP Top View  
Pin Name Function  
A0 - A16  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC  
No Connect  
PLCC Top View  
TSOP Top View  
Type 1  
0394B  
4-129  

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