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AT29C010A-70 PDF预览

AT29C010A-70

更新时间: 2024-11-18 22:25:47
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存
页数 文件大小 规格书
12页 731K
描述
1 Megabit 128K x 8 5-volt Only CMOS Flash Memory

AT29C010A-70 数据手册

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AT29C010A  
Features  
Fast Read Access Time - 70 ns  
5-Volt-Only Reprogramming  
Sector Program Operation  
Single Cycle Reprogram (Erase and Program)  
1024 Sectors (128 bytes/sector)  
Internal Address and Data Latches for 128-Bytes  
Two 8 KB Boot Blocks with Lockout  
Internal Program Control and Timer  
Hardware and Software Data Protection  
Fast Sector Program Cycle Time - 10 ms  
DATA Polling for End of Program Detection  
Low Power Dissipation  
1 Megabit  
(128K x 8)  
5-volt Only  
CMOS Flash  
Memory  
50 mA Active Current  
100 µA CMOS Standby Current  
Typical Endurance > 10,000 Cycles  
Single 5V ±10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Description  
The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read  
only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8  
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device  
offers access times to 70 ns with power dissipation of just 275 mW over the commer-  
cial temperature range. When the device is deselected, the CMOS standby current is  
less than 100 µA. The device endurance is such that any sector can typically be writ-  
ten to in excess of 10,000 times.  
To allow for simple in-system reprogrammability, the AT29C010A does not require  
high input voltages for programming. Five-volt-only commands determine the opera-  
AT29C010A  
(continued)  
Pin Configurations  
DIP Top View  
Pin Name Function  
A0 - A16  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC  
No Connect  
PLCC Top View  
TSOP Top View  
Type 1  
0394B  
4-129  

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