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AT28LV256-25TC PDF预览

AT28LV256-25TC

更新时间: 2024-11-27 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 可编程只读存储器
页数 文件大小 规格书
10页 605K
描述
256K 32K x 8 Low Voltage CMOS E2PROM

AT28LV256-25TC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP1, TSSOP28,.53,22针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.79
最长访问时间:250 ns其他特性:AUTOMATIC WRITE
命令用户界面:NO数据轮询:YES
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PDSO-G28
JESD-609代码:e0长度:11.8 mm
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:64 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00002 A
子类别:EEPROMs最大压摆率:0.015 mA
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
宽度:8 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT28LV256-25TC 数据手册

 浏览型号AT28LV256-25TC的Datasheet PDF文件第2页浏览型号AT28LV256-25TC的Datasheet PDF文件第3页浏览型号AT28LV256-25TC的Datasheet PDF文件第4页浏览型号AT28LV256-25TC的Datasheet PDF文件第5页浏览型号AT28LV256-25TC的Datasheet PDF文件第6页浏览型号AT28LV256-25TC的Datasheet PDF文件第7页 
AT28LV256  
Features  
Fast Read Access Time - 200 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 64-Bytes  
Internal Control Timer  
Fast Write Cycle Times  
Page Write Cycle Time: 10 ms Maximum  
1 to 64-Byte Page Write Operation  
Low Power Dissipation  
15 mA Active Current  
256K (32K x 8)  
Low Voltage  
CMOS  
20 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 10,000 Cycles  
Data Retention: 10 Years  
Single 3.3V ± 5% Supply  
JEDEC Approved Byte-Wide Pinout  
Commercial and Industrial Temperature Ranges  
E2PROM  
Description  
The AT28LV256 is a high-performance Electrically Erasable and Programmable  
Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 200 ns with power dissipation of just 54 mW. When the device is  
deselected, the CMOS standby current is less than 200 µA.  
The AT28LV256 is accessed like a Static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
writing of up to 64-bytes simultaneously. During a write cycle, the addresses and 1 to  
(continued)  
Pin Configurations  
AT28LV256  
PDIP, SOIC  
Top View  
Pin Name  
A0 - A14  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
PLCC  
Top View  
TSOP  
Top View  
Note: PLCC package pins 1 and  
17 are DON’T CONNECT.  
0273E  
2-145  

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