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AT28LV256-25PC PDF预览

AT28LV256-25PC

更新时间: 2024-11-27 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路光电二极管异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
10页 605K
描述
256K 32K x 8 Low Voltage CMOS E2PROM

AT28LV256-25PC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP28,.6
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.32最长访问时间:250 ns
其他特性:AUTOMATIC WRITE命令用户界面:NO
数据轮询:YES耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PDIP-T28JESD-609代码:e0
长度:36.95 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE
页面大小:64 words并行/串行:PARALLEL
电源:3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:5.59 mm
最大待机电流:0.00002 A子类别:EEPROMs
最大压摆率:0.015 mA最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL切换位:YES
宽度:15.24 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT28LV256-25PC 数据手册

 浏览型号AT28LV256-25PC的Datasheet PDF文件第2页浏览型号AT28LV256-25PC的Datasheet PDF文件第3页浏览型号AT28LV256-25PC的Datasheet PDF文件第4页浏览型号AT28LV256-25PC的Datasheet PDF文件第5页浏览型号AT28LV256-25PC的Datasheet PDF文件第6页浏览型号AT28LV256-25PC的Datasheet PDF文件第7页 
AT28LV256  
Features  
Fast Read Access Time - 200 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 64-Bytes  
Internal Control Timer  
Fast Write Cycle Times  
Page Write Cycle Time: 10 ms Maximum  
1 to 64-Byte Page Write Operation  
Low Power Dissipation  
15 mA Active Current  
256K (32K x 8)  
Low Voltage  
CMOS  
20 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 10,000 Cycles  
Data Retention: 10 Years  
Single 3.3V ± 5% Supply  
JEDEC Approved Byte-Wide Pinout  
Commercial and Industrial Temperature Ranges  
E2PROM  
Description  
The AT28LV256 is a high-performance Electrically Erasable and Programmable  
Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 200 ns with power dissipation of just 54 mW. When the device is  
deselected, the CMOS standby current is less than 200 µA.  
The AT28LV256 is accessed like a Static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
writing of up to 64-bytes simultaneously. During a write cycle, the addresses and 1 to  
(continued)  
Pin Configurations  
AT28LV256  
PDIP, SOIC  
Top View  
Pin Name  
A0 - A14  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
PLCC  
Top View  
TSOP  
Top View  
Note: PLCC package pins 1 and  
17 are DON’T CONNECT.  
0273E  
2-145  

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