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AT28LV256-20TI PDF预览

AT28LV256-20TI

更新时间: 2024-11-27 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路光电二极管异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
10页 605K
描述
256K 32K x 8 Low Voltage CMOS E2PROM

AT28LV256-20TI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1, TSSOP28,.53,22
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.65最长访问时间:200 ns
其他特性:AUTOMATIC WRITE命令用户界面:NO
数据轮询:YES耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:11.8 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE页面大小:64 words
并行/串行:PARALLEL电源:3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00005 A
子类别:EEPROMs最大压摆率:0.015 mA
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
切换位:YES宽度:8 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

AT28LV256-20TI 数据手册

 浏览型号AT28LV256-20TI的Datasheet PDF文件第2页浏览型号AT28LV256-20TI的Datasheet PDF文件第3页浏览型号AT28LV256-20TI的Datasheet PDF文件第4页浏览型号AT28LV256-20TI的Datasheet PDF文件第5页浏览型号AT28LV256-20TI的Datasheet PDF文件第6页浏览型号AT28LV256-20TI的Datasheet PDF文件第7页 
AT28LV256  
Features  
Fast Read Access Time - 200 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 64-Bytes  
Internal Control Timer  
Fast Write Cycle Times  
Page Write Cycle Time: 10 ms Maximum  
1 to 64-Byte Page Write Operation  
Low Power Dissipation  
15 mA Active Current  
256K (32K x 8)  
Low Voltage  
CMOS  
20 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 10,000 Cycles  
Data Retention: 10 Years  
Single 3.3V ± 5% Supply  
JEDEC Approved Byte-Wide Pinout  
Commercial and Industrial Temperature Ranges  
E2PROM  
Description  
The AT28LV256 is a high-performance Electrically Erasable and Programmable  
Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 200 ns with power dissipation of just 54 mW. When the device is  
deselected, the CMOS standby current is less than 200 µA.  
The AT28LV256 is accessed like a Static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
writing of up to 64-bytes simultaneously. During a write cycle, the addresses and 1 to  
(continued)  
Pin Configurations  
AT28LV256  
PDIP, SOIC  
Top View  
Pin Name  
A0 - A14  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
PLCC  
Top View  
TSOP  
Top View  
Note: PLCC package pins 1 and  
17 are DON’T CONNECT.  
0273E  
2-145  

AT28LV256-20TI 替代型号

型号 品牌 替代类型 描述 数据表
AT28BV256-20TI ATMEL

完全替代

256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20TU ATMEL

功能相似

256K (32K x 8) Battery-Voltage Parallel EEPROMs

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AT28LV256-20TIT/R ATMEL

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AT28LV256-25 ATMEL

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256K 32K x 8 Low Voltage CMOS E2PROM
AT28LV256-25JC ATMEL

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256K 32K x 8 Low Voltage CMOS E2PROM
AT28LV256-25JCT/R ATMEL

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EEPROM, 32KX8, 250ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28LV256-25JI ATMEL

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256K 32K x 8 Low Voltage CMOS E2PROM
AT28LV256-25JIT/R ATMEL

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EEPROM, 32KX8, 250ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28LV256-25PC ATMEL

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256K 32K x 8 Low Voltage CMOS E2PROM
AT28LV256-25PI ATMEL

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256K 32K x 8 Low Voltage CMOS E2PROM
AT28LV256-25SC ATMEL

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256K 32K x 8 Low Voltage CMOS E2PROM
AT28LV256-25SCT/R ATMEL

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EEPROM, 32KX8, 250ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28