Datasheet > AT28LV010-25SI

AT28LV010-25SI

更新时间： 2025-09-22 19:19:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		存储
页数	文件大小	规格书
15页	347K
描述
存储容量(Mb):1Mb（128K x 8）;内存数据长度(bit):128K ;字编码数(k):128K ;元器件封装:32-SOP;

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AT28LV010-25SI 数据手册

Features

• Single 3.3V 10% Supply

• Fast Read Access Time – 200 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 128 Bytes

– Internal Control Timer

• Fast Write Cycle Time

– Page Write Cycle Time – 10 ms Maximum

– 1 to 128-Byte Page Write Operation

• Low Power Dissipation

1-Megabit

(128K x 8)

Low Voltage

Paged Parallel

EEPROMs

– 15 mA Active Current

– 20 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 100,000K Cycles

– Data Retention: 10 Years

• JEDEC Approved Byte-Wide Pinout

• Commercial, Industrial and Automotive Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

AT28LV010

1. Description

The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program-

mable Read-Only Memory. Its 1 megabit of memory is organized as 131,072 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 200 ns with power dissipation of just 54 mW. When the device

is deselected, the CMOS standby current is less than 20 µA.

The AT28LV010 is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 128-byte page register to allow

writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to

128 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA polling of I/O7. Once the end of a write cycle has been detected a

new access for a read or write can begin.

Atmel’s 28LV010 has additional features to ensure high quality and manufacturability.

The device utilizes internal error correction for extended endurance and improved

data retention characteristics. Software data protection is implemented to guard

against inadvertent writes. The device also includes an extra 128 bytes of EEPROM

for device identification or tracking.

0395C–PEEPR–04/05

12 3 4 5 6 7...15

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与AT28LV010-25SI相关器件

型号	品牌	获取价格	描述	数据表
AT28LV010-25TC	ATMEL	获取价格	1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM
AT28LV010-25TC	MICROCHIP	获取价格	存储容量(Mb):1Mb（128K x 8）;内存数据长度(bit):128K ;字编码数
AT28LV010-25TCT/R	ATMEL	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32
AT28LV010-25TI	ATMEL	获取价格	1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM
AT28LV010-25TIT/R	ATMEL	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32, PLASTIC, TSOP-32
AT28LV010-25TJ	MICROCHIP	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT28LV010-25TJT/R	ATMEL	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32
AT28LV010-25TL	MICROCHIP	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT28LV010-25TLT/R	ATMEL	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32
AT28LV010-DWF	ATMEL	获取价格	EEPROM, 250ns, Parallel, CMOS

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