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AT28HC256E-90DM/883 PDF预览

AT28HC256E-90DM/883

更新时间: 2024-11-25 22:29:39
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
16页 448K
描述
256 32K x 8 High Speed Parallel EEPROMs

AT28HC256E-90DM/883 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:DIP
包装说明:DIP, DIP28,.6针数:28
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:8.35
Is Samacsys:N最长访问时间:90 ns
其他特性:AUTOMATIC WRITE命令用户界面:NO
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-GDIP-T28JESD-609代码:e0
长度:37.25 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32KX8输出特性:3-STATE
封装主体材料:CERAMIC, GLASS-SEALED封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883 Class B
座面最大高度:5.72 mm最大待机电流:0.0003 A
子类别:EEPROMs最大压摆率:0.08 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
宽度:15.24 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT28HC256E-90DM/883 数据手册

 浏览型号AT28HC256E-90DM/883的Datasheet PDF文件第2页浏览型号AT28HC256E-90DM/883的Datasheet PDF文件第3页浏览型号AT28HC256E-90DM/883的Datasheet PDF文件第4页浏览型号AT28HC256E-90DM/883的Datasheet PDF文件第5页浏览型号AT28HC256E-90DM/883的Datasheet PDF文件第6页浏览型号AT28HC256E-90DM/883的Datasheet PDF文件第7页 
Features  
Fast Read Access Time - 70 ns  
Automatic Page Write Operation  
– Internal Address and Data Latches for 64 Bytes  
– Internal Control Timer  
Fast Write Cycle Times  
– Page Write Cycle Time: 3 ms or 10 ms Maximum  
– 1 to 64-Byte Page Write Operation  
Low Power Dissipation  
– 80 mA Active Current  
– 3 mA Standby Current  
256 (32K x 8)  
High Speed  
Parallel  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
– Endurance: 104 or 105 Cycles  
– Data Retention: 10 Years  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-Wide Pinout  
Full Military, Commercial, and Industrial Temperature Ranges  
EEPROMs  
AT28HC256  
Description  
The AT28HC256 is a high-performance Electrically Erasable and Programmable  
Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Man-  
ufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256  
(continued)  
Pin Configurations  
TSOP  
Top View  
Pin Name  
A0 - A14  
CE  
Function  
Addresses  
OE  
A11  
A9  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A10  
CE  
2
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
3
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
A8  
4
OE  
A13  
WE  
VCC  
A14  
A12  
A7  
5
6
WE  
7
8
I/O0 - I/O7  
NC  
9
10  
11  
12  
13  
14  
A6  
A5  
DC  
Don’t Connect  
A4  
A1  
A3  
A2  
LCC, PLCC  
Top View  
CERDIP, PDIP, FLATPACK  
Top View  
PGA  
Top View  
A14  
A12  
A7  
1
2
3
4
5
6
7
8
9
28 VCC  
27 WE  
26 A13  
25 A8  
A6  
A5  
A4  
A3  
A2  
5
6
7
8
9
29 A8  
28 A9  
27 A11  
26 NC  
25 OE  
24 A10  
23 CE  
22 I/O7  
21 I/O6  
A6  
A5  
24 A9  
A4  
23 A11  
22 OE  
21 A10  
20 CE  
19 I/O7  
18 I/O6  
17 I/O5  
16 I/O4  
15 I/O3  
A3  
A2  
A1 10  
A0 11  
A1  
A0 10  
I/O0 11  
I/O1 12  
I/O2 13  
GND 14  
NC 12  
I/O0 13  
Rev. 0007G–10/98  
Note: PLCC package pins 1 and  
17 are DON’T CONNECT.  
1

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