Datasheet > AT28HC256E-12SU

AT28HC256E-12SU

更新时间： 2024-01-02 23:23:01

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
24页	465K
描述
IC EEPROM 256KBIT 120NS 28SOIC

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中文翻译

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数据手册
替代型号

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AT28HC256E-12SU 数据手册

Features

• Fast Read Access Time – 70 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

• Fast Write Cycle Times

– Page Write Cycle Time: 3 ms or 10 ms Maximum

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

256K (32K x 8)

High-speed

Parallel

– 80 mA Active Current

– 3 mA Standby Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10⁴or 10⁵Cycles

– Data Retention: 10 Years

EEPROM

• Single 5V 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Full Military and Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

AT28HC256

1. Description

The AT28HC256 is a high-performance electrically erasable and programmable read-

only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-

tured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers

access times to 70 ns with power dissipation of just 440 mW. When the AT28HC256

is deselected, the standby current is less than 5 mA.

The AT28HC256 is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64

bytes of data are internally latched, freeing the addresses and data bus for other oper-

ations. Following the initiation of a write cycle, the device will automatically write the

latched data using an internal control timer. The end of a write cycle can be detected

by DATA Polling of I/O7. Once the end of a write cycle has been detected a new

access for a read or write can begin.

Atmel’s 28HC256 has additional features to ensure high quality and manufacturability.

The device utilizes internal error correction for extended endurance and improved

data retention characteristics. An optional software data protection mechanism is

available to guard against inadvertent writes. The device also includes an extra

64 bytes of EEPROM for device identification or tracking.

0007N–PEEPR–9/09

12 3 4 5 6 7...24

中文翻译

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AT28HC256E-12SU 替代型号

型号	品牌	替代类型	描述	数据表
AT28HC256-12SU	MICROCHIP	完全替代	IC EEPROM 256KBIT 120NS 28SOIC

与AT28HC256E-12SU相关器件

型号	品牌	获取价格	描述	数据表
AT28HC256E-12SU-202	MICROCHIP	获取价格	IC EEPROM 256KBIT 120NS 28SOIC
AT28HC256E-12SU-T	MICROCHIP	获取价格	120NS, SOIC, IND TEMP, GREEN
AT28HC256E-12TC	ATMEL	获取价格	256 32K x 8 High Speed Parallel EEPROMs
AT28HC256E-12TCT/R	ATMEL	获取价格	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28
AT28HC256E-12TI	ATMEL	获取价格	256 32K x 8 High Speed Parallel EEPROMs
AT28HC256E-12TIT/R	ATMEL	获取价格	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28
AT28HC256E-12TJT/R	ATMEL	获取价格	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28
AT28HC256E-12TLT/R	ATMEL	获取价格	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28
AT28HC256E-12TU	MICROCHIP	获取价格	IC EEPROM 256KBIT 120NS 28TSOP
AT28HC256E-12TU-T	MICROCHIP	获取价格	120NS TSOP IND TEMP GREEN

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