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AT28C256E-15JC PDF预览

AT28C256E-15JC

更新时间: 2024-11-01 22:56:39
品牌 Logo 应用领域
爱特美尔 - ATMEL 可编程只读存储器
页数 文件大小 规格书
14页 765K
描述
256K 32K x 8 Paged CMOS E2PROM

AT28C256E-15JC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:QCCJ, LDCC32,.5X.6
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.47最长访问时间:150 ns
其他特性:AUTOMATIC WRITE命令用户界面:NO
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PQCC-J32JESD-609代码:e0
长度:13.97 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:2功能数量:1
端子数量:32字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V编程电压:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:3.556 mm最大待机电流:0.0002 A
子类别:EEPROMs最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30切换位:YES
宽度:11.43 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT28C256E-15JC 数据手册

 浏览型号AT28C256E-15JC的Datasheet PDF文件第2页浏览型号AT28C256E-15JC的Datasheet PDF文件第3页浏览型号AT28C256E-15JC的Datasheet PDF文件第4页浏览型号AT28C256E-15JC的Datasheet PDF文件第5页浏览型号AT28C256E-15JC的Datasheet PDF文件第6页浏览型号AT28C256E-15JC的Datasheet PDF文件第7页 
AT28C256  
Features  
Fast Read Access Time - 150 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 64-Bytes  
Internal Control Timer  
Fast Write Cycle Times  
Page Write Cycle Time: 3 ms or 10 ms Maximum  
1 to 64-Byte Page Write Operation  
Low Power Dissipation  
50 mA Active Current  
256K (32K x 8)  
Paged  
200 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 104 or 105 Cycles  
Data Retention: 10 Years  
CMOS  
E2PROM  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-Wide Pinout  
Full Military, Commercial, and Industrial Temperature Ranges  
Description  
The AT28C256 is a high-performance Electrically Erasable and Programmable Read  
Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-  
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access  
times to 150 ns with power dissipation of just 440 mW. When the device is deselected,  
the CMOS standby current is less than 200 µA.  
(continued)  
Pin Configurations  
TSOP  
Top View  
Pin Name  
A0 - A14  
CE  
Function  
AT28C256  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
CERDIP, PDIP,  
FLATPACK, SOIC  
Top View  
LCC, PLCC  
Top View  
PGA  
Top View  
Note: PLCC package pins 1 and  
17 are DON’T CONNECT.  
0006F  
2-217  

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