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AT28C010E-20TIT/R PDF预览

AT28C010E-20TIT/R

更新时间: 2024-02-08 13:23:17
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
11页 574K
描述
EEPROM, 128KX8, 200ns, Parallel, CMOS, PDSO32, PLASTIC, TSOP-32

AT28C010E-20TIT/R 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP1,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.73
Is Samacsys:N最长访问时间:200 ns
其他特性:AUTOMATIC WRITEJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:8 mm
Base Number Matches:1

AT28C010E-20TIT/R 数据手册

 浏览型号AT28C010E-20TIT/R的Datasheet PDF文件第2页浏览型号AT28C010E-20TIT/R的Datasheet PDF文件第3页浏览型号AT28C010E-20TIT/R的Datasheet PDF文件第4页浏览型号AT28C010E-20TIT/R的Datasheet PDF文件第5页浏览型号AT28C010E-20TIT/R的Datasheet PDF文件第6页浏览型号AT28C010E-20TIT/R的Datasheet PDF文件第7页 
AT28C010 Com/Ind  
Features  
Fast Read Access Time - 120 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 128-Bytes  
Internal Control Timer  
Fast Write Cycle Time  
Page Write Cycle Time - 10 ms Maximum  
1 to 128-Byte Page Write Operation  
Low Power Dissipation  
40 mA Active Current  
1 Megabit  
(128K x 8)  
Paged  
200 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 104 or 105 Cycles  
Data Retention: 10 Years  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-Wide Pinout  
Commercial and Industrial Temperature Ranges  
CMOS  
E2PROM  
Description  
The AT28C010 is a high-performance Electrically Erasable and Programmable Read  
Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 120 ns with power dissipation of just 220 mW. When the device is  
deselected, the CMOS standby current is less than 200 µA.  
Commercial  
and  
Industrial  
(continued)  
Pin Configurations  
TSOP  
Top View  
Pin Name  
A0 - A16  
CE  
Function  
Addresses  
AT28C010 Com/Ind  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
Data  
Inputs/Outputs  
I/O0 - I/O7  
NC  
DC  
No Connect  
Don’t Connect  
PLCC  
PDIP  
Top View  
Top View  
Note: PLCC package pin 1  
is a DON’T CONNECT.  
0353C  
2-231  

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