Datasheet > AT28BV16

AT28BV16

更新时间： 2024-11-27 22:24:23

品牌	Logo	应用领域
爱特美尔 - ATMEL		电池可编程只读存储器
页数	文件大小	规格书
8页	401K
描述
16K 2K x 8 Battery-Voltage CMOS E2PROM

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中文翻译

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数据手册

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AT28BV16 数据手册

AT28BV16

Features

2.7 to 3.6V Supply

•

Full Read and Write Operation

Low Power Dissipation

•

8 mA Active Current

50 µA CMOS Standby Current

Read Access Time - 250 ns

Byte Write - 3 ms

Direct Microprocessor Control

DATA Polling

•

READ/BUSY Open Drain Output on TSOP

High Reliability CMOS Technology

Endurance: 100,000 Cycles

16K (2K x 8)

Battery-Voltage

CMOS

•

Data Retention: 10 Years

Low Voltage CMOS Compatible Inputs and Outputs

JEDEC Approved Byte Wide Pinout

Commercial and Industrial Temperature Ranges

•

E²PROM

Description

The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-

mable Read Only Memory with easy to use features. The AT28BV16 is a 16K mem-

ory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s

reliable nonvolatile CMOS technology.

The AT28BV16 is accessed like a static RAM for the read or write cycles without the

need of external components. During a byte write, the address and data are latched

(continued)

Pin Configurations

Pin Name

A0 - A10

Function

TSOP

Top View

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

AT28BV16

I/O0 - I/O7

Don’t Connect

PLCC

Top View

PDIP, SOIC

Top View

0308A

2-119

12 3 4 5 6 7 8

中文翻译

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