5秒后页面跳转
AT28BV16-25TC PDF预览

AT28BV16-25TC

更新时间: 2024-11-27 22:24:23
品牌 Logo 应用领域
爱特美尔 - ATMEL 电池存储内存集成电路光电二极管异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
8页 401K
描述
16K 2K x 8 Battery-Voltage CMOS E2PROM

AT28BV16-25TC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1, TSSOP28,.53,22
针数:28Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.82最长访问时间:250 ns
其他特性:10 YEARS DATA RETENTION命令用户界面:NO
数据轮询:YES数据保留时间-最小值:10
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:11.8 mm内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:28字数:2048 words
字数代码:2000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
最大待机电流:0.00005 A子类别:EEPROMs
最大压摆率:0.008 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO宽度:8 mm
最长写入周期时间 (tWC):3 msBase Number Matches:1

AT28BV16-25TC 数据手册

 浏览型号AT28BV16-25TC的Datasheet PDF文件第2页浏览型号AT28BV16-25TC的Datasheet PDF文件第3页浏览型号AT28BV16-25TC的Datasheet PDF文件第4页浏览型号AT28BV16-25TC的Datasheet PDF文件第5页浏览型号AT28BV16-25TC的Datasheet PDF文件第6页浏览型号AT28BV16-25TC的Datasheet PDF文件第7页 
AT28BV16  
Features  
2.7 to 3.6V Supply  
Full Read and Write Operation  
Low Power Dissipation  
8 mA Active Current  
50 µA CMOS Standby Current  
Read Access Time - 250 ns  
Byte Write - 3 ms  
Direct Microprocessor Control  
DATA Polling  
READ/BUSY Open Drain Output on TSOP  
High Reliability CMOS Technology  
Endurance: 100,000 Cycles  
16K (2K x 8)  
Battery-Voltage  
CMOS  
Data Retention: 10 Years  
Low Voltage CMOS Compatible Inputs and Outputs  
JEDEC Approved Byte Wide Pinout  
Commercial and Industrial Temperature Ranges  
E2PROM  
Description  
The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-  
mable Read Only Memory with easy to use features. The AT28BV16 is a 16K mem-  
ory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s  
reliable nonvolatile CMOS technology.  
The AT28BV16 is accessed like a static RAM for the read or write cycles without the  
need of external components. During a byte write, the address and data are latched  
(continued)  
Pin Configurations  
Pin Name  
A0 - A10  
CE  
Function  
TSOP  
Top View  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
AT28BV16  
OE  
WE  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
PLCC  
Top View  
PDIP, SOIC  
Top View  
0308A  
2-119  

与AT28BV16-25TC相关器件

型号 品牌 获取价格 描述 数据表
AT28BV16-25TCT/R ATMEL

获取价格

EEPROM, 2KX8, 250ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28
AT28BV16-25TI ATMEL

获取价格

16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV16-25TIT/R ATMEL

获取价格

EEPROM, 2KX8, 250ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28
AT28BV16-30 ATMEL

获取价格

16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV16-30JC ATMEL

获取价格

16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV16-30JCT/R ATMEL

获取价格

EEPROM, 2KX8, 300ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28BV16-30JI ATMEL

获取价格

16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV16-30JIT/R ATMEL

获取价格

EEPROM, 2KX8, 300ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28BV16-30PC ATMEL

获取价格

16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV16-30PI ATMEL

获取价格

16K 2K x 8 Battery-Voltage CMOS E2PROM