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AT26DF161

更新时间： 2024-09-27 23:13:55
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
31页 488K
描述
16-megabit 2.7-volt Only Serial Firmware DataFlash Memory

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中文翻译

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AT26DF161 数据手册

 浏览型号AT26DF161的Datasheet PDF文件第2页浏览型号AT26DF161的Datasheet PDF文件第3页浏览型号AT26DF161的Datasheet PDF文件第4页浏览型号AT26DF161的Datasheet PDF文件第5页浏览型号AT26DF161的Datasheet PDF文件第6页浏览型号AT26DF161的Datasheet PDF文件第7页 
Features  
• Single 2.7V - 3.6V Supply  
• Serial Peripheral Interface (SPI) Compatible  
– Supports SPI Modes 0 and 3  
• 66 MHz Maximum Clock Frequency  
• Flexible, Uniform Erase Architecture  
– 4-Kbyte Blocks  
– 32-Kbyte Blocks  
– 64-Kbyte Blocks  
16-megabit  
2.7-volt Only  
Serial Firmware  
DataFlash®  
Memory  
– Full Chip Erase  
• Individual Sector Protection for Program/Erase Protection  
– Sixteen 128-Kbyte Physical Sectors  
• Hardware Controlled Locking of Protected Sectors  
• Flexible Programming  
– Byte/Page Program (1 to 256 Bytes)  
• JEDEC Standard Manufacturer and Device ID Read Methodology  
• Low Power Dissipation  
– 7 mA Active Read Current (Typical)  
– 4 µA Deep Power-Down Current (Typical)  
• Endurance: 100,000 Program/Erase Cycles  
• Data Retention: 20 Years  
• Complies with Full Industrial Temperature Range  
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options  
– 8-lead SOIC (200-mil wide)  
AT26DF161  
Preliminary  
– 8-contact MLF (5 mm x 6 mm)  
1. Description  
The AT26DF161 is a serial interface Flash memory device designed for use in a wide  
variety of high-volume consumer based applications in which program code is shad-  
owed from Flash memory into embedded or external RAM for execution. The flexible  
erase architecture of the AT26DF161, with its erase granularity as small as 4-Kbytes,  
makes it ideal for data storage as well, eliminating the need for additional data storage  
EEPROM devices.  
The physical sectoring and the erase block sizes of the AT26DF161 have been opti-  
mized to meet the needs of today's code and data storage applications. By optimizing  
the size of the physical sectors and erase blocks, the memory space can be used  
much more efficiently. Because certain code modules and data storage segments  
must reside by themselves in their own protected sectors, the wasted and unused  
memory space that occurs with large sectored and large block erase Flash memory  
devices can be greatly reduced. This increased memory space efficiency allows addi-  
tional code routines and data storage segments to be added while still maintaining the  
same overall device density.  
3599A–DFLASH–11/05  
1234567...31

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