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AT26DF081A-SU

更新时间： 2024-09-28 04:07:15
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储
页数 文件大小 规格书
36页 585K
描述
8-megabit 2.7-volt Only Serial Firmware DataFlash Memory

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中文翻译

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AT26DF081A-SU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SOP, SOP8,.3
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.76最大时钟频率 (fCLK)：70 MHz
数据保留时间-最小值：20耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：5.29 mm内存密度：8388608 bit
内存集成电路类型：FLASH内存宽度：1
湿度敏感等级：1功能数量：1
端子数量：8字数：8388608 words
字数代码：8000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：8MX1封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.3
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL峰值回流温度（摄氏度）：260
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified座面最大高度：2.16 mm
串行总线类型：SPI最大待机电流：0.000035 A
子类别：Flash Memories最大压摆率：0.018 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn) - annealed端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：5.24 mm写保护：HARDWARE/SOFTWARE
Base Number Matches：1

AT26DF081A-SU 数据手册

 浏览型号AT26DF081A-SU的Datasheet PDF文件第2页浏览型号AT26DF081A-SU的Datasheet PDF文件第3页浏览型号AT26DF081A-SU的Datasheet PDF文件第4页浏览型号AT26DF081A-SU的Datasheet PDF文件第5页浏览型号AT26DF081A-SU的Datasheet PDF文件第6页浏览型号AT26DF081A-SU的Datasheet PDF文件第7页 
Features  
• Single 2.7V - 3.6V Supply  
• Serial Peripheral Interface (SPI) Compatible  
– Supports SPI Modes 0 and 3  
• 70 MHz Maximum Clock Frequency  
• Flexible, Uniform Erase Architecture  
– 4-Kbyte Blocks  
– 32-Kbyte Blocks  
– 64-Kbyte Blocks  
8-megabit  
– Full Chip Erase  
• Optimized Physical Sectoring for Code Shadowing and Code + Data Storage  
Applications  
2.7-volt Only  
Serial Firmware  
DataFlash®  
Memory  
– One 32-Kbyte Top Boot Sector  
– Two 8-Kbyte Sectors  
– One 16-Kbyte Sector  
– Fifteen 64-Kbyte Sectors  
• Individual Sector Protection for Program/Erase Protection  
• Hardware Controlled Locking of Protected Sectors  
• Flexible Programming Options  
– Byte/Page Program (1 to 256 Bytes)  
– Sequential Program Mode Capability  
• JEDEC Standard Manufacturer and Device ID Read Methodology  
• Low Power Dissipation  
– 7 mA Active Read Current (Typical)  
– 11 µA Deep Power-down Current (Typical)  
• Endurance: 100,000 Program/Erase Cycles  
• Data Retention: 20 Years  
AT26DF081A  
Preliminary  
• Complies with Full Industrial Temperature Range  
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options  
– 8-lead SOIC (150-mil and 200-mil wide)  
1. Description  
The AT26DF081A is a serial interface Flash memory device designed for use in a  
wide variety of high-volume consumer-based applications in which program code is  
shadowed from Flash memory into embedded or external RAM for execution. The  
flexible erase architecture of the AT26DF081A, with its erase granularity as small as  
4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional  
data storage EEPROM devices.  
The physical sectoring and the erase block sizes of the AT26DF081A have been opti-  
mized to meet the needs of today’s code and data storage applications. By optimizing  
the size of the physical sectors and erase blocks, the memory space can be used  
much more efficiently. Because certain code modules and data storage segments  
must reside by themselves in their own protected sectors, the wasted and unused  
memory space that occurs with large sectored and large block erase Flash memory  
devices can be greatly reduced. This increased memory space efficiency allows addi-  
tional code routines and data storage segments to be added while still maintaining the  
same overall device density.  
3600A–DFLASH–11/05  
1234567...36

中文翻译

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