Datasheet > AT25XE011

AT25XE011

更新时间： 2024-10-29 14:58:03

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
51页	1573K
描述
1Mbit, 1.65V to 3.6V Range SPI Serial Flash Memory with Dual Read Support and Low Read Current

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AT25XE011 数据手册

Datasheet

AT25XE011

1-Mbit, 1.65 V Minimum SPI Serial Flash Memory with Dual-Read Support

Features

• Single 1.65 V - 3.6 V Supply

• Serial Peripheral Interface (SPI) Compatible

• Supports SPI Modes 0 and 3

• Supports Dual Output Read

• 104 MHz Maximum Operating Frequency

• Clock-to-Output (t_V) of 6 ns

• Flexible, Optimized Erase Architecture for Code + Data Storage Applications

• Small (256-Byte) Page Erase

• Uniform 4-kByte Block Erase

• Uniform 32-kByte Block Erase

• Full Chip Erase

• Hardware Controlled Locking of Protected Sectors via WP Pin

• 128-byte, One-Time Programmable (OTP) Security Register

• 64 bytes factory programmed with a unique identifier

• 64 bytes user programmable

• Flexible Programming

• Byte/Page Program (1 to 256 Bytes)

• Fast Program and Erase Times

• 2 ms Typical Page Program (256 Bytes) Time

• 50 ms Typical 4-kByte Block Erase Time

• 400 ms Typical 32-kByte Block Erase Time

• Automatic Checking and Reporting of Erase/Program Failures

• Software Controlled Reset

• JEDEC Standard Manufacturer and Device ID Read Methodology

• Low Power Dissipation

• 200 nA Ultra-Deep Power-Down current (Typical)

• 4.5 µA Deep Power-Down Current (Typical)

• 25 uA Standby current (Typical)

• 3.5 mA Active Read Current (Typical)

• Endurance: 100,000 Program/Erase Cycles

• Data Retention: 20 Years

• Temperature Range:-10 °C to +85 °C (1.65 V to 3.6 V), -40 °C to +85 °C (1.7 V to 3.6 V)

• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options

• 8-lead SOIC (150-mil)

• 8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)

• 8-lead TSSOP Package

DS-AT25XE011-059 Rev. J

8/1/22

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