Datasheet > AT25EU0081A

AT25EU0081A

更新时间： 2024-03-03 10:11:14

品牌	Logo	应用领域
瑞萨 - RENESAS		闪存
页数	文件大小	规格书
63页	2379K
描述
8 Mbit 超低功耗串行闪存

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AT25EU0081A 数据手册

Datasheet

AT25EU0081A

8-Mbit, Ultra-Low Energy Serial Flash Memory

Features

▪ Voltage Range: 1.65 V – 3.6 V

▪ 8-Mbit Flash Memory

▪ Serial Peripheral Interface (SPI) compatible

• Supports SPI modes 0 and 3

• Supports single input/output operations (1,1,1)

• Supports dual input and dual output operations (1,1,2), (1,2,2), (0,2,2)

• Supports quad input and quad output operations (1,1,4), (1,4,4), (0,4,4)

▪ 108 MHz Maximum Operating Frequency

▪ Program

• Serial-input Page Program up to 256 bytes

• Dual-Input Page Program up to 256 bytes

• Quad-Input Page Program up to 256 bytes

• Program Suspend and Resume

▪ Erase

• Page erase (256-byte)

• Block erase (4/32/64 kbyte)

• Full Chip erase

• Erase Suspend and Resume

▪ Program/Erase Speed

• Page Program time: 2 ms typical

• Page Erase time: 8 ms typical

• Block Erase time: 8 ms typical

• Chip Erase time: 8 ms typical

▪ Flexible Architecture: 4/32/64 kbyte blocks

▪ Software-controlled Reset

▪ Software/Hardware Write Protection

• 3x512-Byte Security Registers with OTP Lock

• Enable/Disable protection with WP Pin

• Write protect all/portion of memory via software protect

• Top or Bottom Block selection

▪ Low Power Consumption

• 1.1 mA active read current (typical)

• 100 nA Deep Power-Down (DPD) current (typical)

▪ Temperature Range: -40 °C to +85 °C

▪ Cycling Endurance/Data Retention

• 10k program and erase cycles

• 20-year data retention

▪ Industry standard green (Pb/Halide-free/RoHS Compliant) Package Options

• 8-lead SOIC (150-mil and 208-mil)

• 8-pad 2 x 3 x 0.6 mm UDFN

DS-AT25EU0081A-213 Rev. C

Jan 5, 2024

Page 1

12 3 4 5 6 7...63

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