是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | VSON, SOLCC8,.2,25 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.79 | 最大时钟频率 (fCLK): | 5 MHz |
数据保留时间-最小值: | 100 | 耐久性: | 1000000 Write/Erase Cycles |
JESD-30 代码: | R-XDSO-N8 | JESD-609代码: | e0 |
长度: | 4.9 mm | 内存密度: | 65536 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
湿度敏感等级: | 1 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 8192 words |
字数代码: | 8000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 8KX8 | 封装主体材料: | UNSPECIFIED |
封装代码: | VSON | 封装等效代码: | SOLCC8,.2,25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, VERY THIN PROFILE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | 240 |
电源: | 2/5 V | 认证状态: | Not Qualified |
座面最大高度: | 0.9 mm | 串行总线类型: | SPI |
最大待机电流: | 0.0000015 A | 子类别: | EEPROMs |
最大压摆率: | 0.01 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.8 V | 标称供电电压 (Vsup): | 2.7 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子节距: | 0.65 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 3 mm | 最长写入周期时间 (tWC): | 5 ms |
写保护: | HARDWARE/SOFTWARE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AT25640AY1-10YI-2.7 | ATMEL |
获取价格 |
SPI Serial EEPROMs | |
AT25640AY1-10YU-1.8 | ATMEL |
获取价格 |
EEPROM, 8KX8, Serial, CMOS, 4.90 X 3 MM, GREEN, MAP-8 | |
AT25640AY1-10YU-2.7 | MICROCHIP |
获取价格 |
EEPROM, 8KX8, Serial | |
AT25640AY6-10YH-1.8 | ATMEL |
获取价格 |
EEPROM, 8KX8, Serial, CMOS, 2 X 3 MM, 0.50 MM PITCH, GREEN, MO-229, DFN-8 | |
AT25640B | ATMEL |
获取价格 |
SPI Serial EEPROMs 32K (4096 x 8) 64K (8192 x 8) | |
AT25640B | MICROCHIP |
获取价格 |
The Microchip AT25640B is a 64 Kb Serial EEPROM utilizing theindustry standard Serial Peri | |
AT25640B-CUL-T | ATMEL |
获取价格 |
serial electrically-erasable programmable read-only memory | |
AT25640BD3-DH-T | ATMEL |
获取价格 |
SPI Serial EEPROMs 32K (4096 x 8) 64K (8192 x 8) | |
AT25640B-MAHL-E | MICROCHIP |
获取价格 |
EEPROM, 8KX8, Serial, CMOS, PDSO8 | |
AT25640B-MAHL-T | ATMEL |
获取价格 |
serial electrically-erasable programmable read-only memory |