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AT25512-TH-B PDF预览

AT25512-TH-B

更新时间: 2024-11-05 20:29:23
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟ATM异步传输模式光电二极管内存集成电路
页数 文件大小 规格书
21页 777K
描述
IC EEPROM 512KBIT 20MHZ 8TSSOP

AT25512-TH-B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:4.40 MM, HALOGEN AND LEAD FREE, PLASTIC, MO-153AA, TSSOP-8
Reach Compliance Code:compliantFactory Lead Time:9 weeks
风险等级:2.08Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:4626
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:TSSOP 8X
Samacsys Released Date:2015-04-16 09:48:08Is Samacsys:N
最大时钟频率 (fCLK):5 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.4 mm
内存密度:524288 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:65536 words字数代码:64000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:SPI最大待机电流:0.000003 A
子类别:EEPROMs最大压摆率:0.01 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.7 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

AT25512-TH-B 数据手册

 浏览型号AT25512-TH-B的Datasheet PDF文件第2页浏览型号AT25512-TH-B的Datasheet PDF文件第3页浏览型号AT25512-TH-B的Datasheet PDF文件第4页浏览型号AT25512-TH-B的Datasheet PDF文件第5页浏览型号AT25512-TH-B的Datasheet PDF文件第6页浏览型号AT25512-TH-B的Datasheet PDF文件第7页 
AT25512  
SPI Serial EEPROM  
512-Kbit (65,536 x 8)  
DATASHEET  
Features  
Serial Peripheral Interface (SPI) Compatible  
Supports SPI Modes 0 (0,0) and 3 (1,1)  
Datasheet Describes Mode 0 Operation  
Low-voltage Operation  
̶
1.8 (VCC = 1.8V to 5.5V)  
20MHz Clock Rate (4.5V to 5.5V)  
128-byte Page Mode and Byte Write Operation Supported  
Block Write Protection  
̶
Protect ¼, ½, or Entire Array  
Write Protect (WP) Pin and Write Disable Instructions for Both Hardware  
and Software Data Protection  
Self-timed Write Cycle (5ms Max)  
High Reliability  
̶
̶
Endurance: 1,000,000 Write Cycles  
Data Retention: 40 Years  
Lead-free/Halogen-free Devices  
8-lead JEDEC SOIC, 8-lead TSSOP, and 8-pad UDFN Packages  
Die Sale Options: Wafer Form and Bumped Die  
Description  
The Atmel® AT25512 provides 524,288 bits of Serial Electrically Erasable  
Programmable Read-Only Memory (EEPROM) organized as 65,536 words of  
8 bits each. The device is optimized for use in many industrial and commercial  
applications where low-power and low-voltage operation are essential. The  
devices are available in space saving 8-lead JEDEC SOIC, 8-lead TSSOP, and  
8-pad UDFN packages. In addition, the device operates from 1.8V to 5.5V.  
The AT25512 is enabled through the Chip Select pin (CS) and accessed via a  
3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and  
Serial Clock (SCK). All programming cycles are completely self-timed, and no  
separate erase cycle is required before write.  
Block Write Protection is enabled by programming the status register with top ¼,  
top ½, or entire array of Write Protection. Separate program enable and program  
disable instructions are provided for additional data protection. Hardware Data  
Protection is provided via the WP pin to protect against inadvertent write attempts  
to the status register. The HOLD pin may be used to suspend any serial  
communication without resetting the serial sequence.  
Atmel-5165K-SEEPROM-AT25512-Datasheet_012017  

AT25512-TH-B 替代型号

型号 品牌 替代类型 描述 数据表
25AA512-I/SN MICROCHIP

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512 Kbit SPI Bus Serial EEPROM
SST25VF512A-33-4C-SAE MICROCHIP

功能相似

512K X 1 SPI BUS SERIAL EEPROM, PDSO8, 4.90 X 6 MM, ROHS COMPLIANT, MS-012AA, SOIC-8

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