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AT25128B-XHL-T PDF预览

AT25128B-XHL-T

更新时间: 2024-09-15 08:37:35
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路光电二极管异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
24页 1027K
描述
serial electrically-erasable programmable read only memory

AT25128B-XHL-T 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TSSOP包装说明:TSSOP, TSSOP8,.25
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:3.61Is Samacsys:N
最大时钟频率 (fCLK):5 MHz数据保留时间-最小值:100
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.4 mm
内存密度:131072 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:SPI最大待机电流:0.000003 A
子类别:EEPROMs最大压摆率:0.01 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

AT25128B-XHL-T 数据手册

 浏览型号AT25128B-XHL-T的Datasheet PDF文件第2页浏览型号AT25128B-XHL-T的Datasheet PDF文件第3页浏览型号AT25128B-XHL-T的Datasheet PDF文件第4页浏览型号AT25128B-XHL-T的Datasheet PDF文件第5页浏览型号AT25128B-XHL-T的Datasheet PDF文件第6页浏览型号AT25128B-XHL-T的Datasheet PDF文件第7页 
Features  
Serial Peripheral Interface (SPI) Compatible  
Supports SPI Modes 0 (0,0) and 3 (1,1)  
Data Sheet Describes Mode 0 Operation  
Low-voltage and Standard-voltage Operation  
– 1.8 (VCC = 1.8V to 5.5V)  
20 MHz Clock Rate (5V)  
64-byte Page Mode and Byte Write Operation  
Block Write Protection  
SPI Serial  
EEPROMS  
– Protect 1/4, 1/2, or Entire Array  
Write Protect (WP) Pin and Write Disable Instructions for Both Hardware and Software  
Data Protection  
Self-timed Write Cycle (5 ms Max)  
High-reliability  
128K (16,384 x 8)  
– Endurance: 1 Million Write Cycles  
– Data Retention: >100 Years  
256K (32,768 x 8)  
Green (Pb/Halide-free/RoHS Compliant) Packaging Options  
Die Sales: Wafer Form, Waffle Pack, and Bumped Die  
AT25128B  
AT25256B  
Description  
The AT25128B/256B provides 131,072/262,144 bits of serial electrically-erasable pro-  
grammable read only memory (EEPROM) organized as 16,384/32,768 words of 8 bits  
each. The device is optimized for use in many industrial and commercial applications  
where low-power and low-voltage operation are essential. The devices are available  
in space saving 8-lead SOIC, 8-lead TSSOP, 8-ball VFBGA and 8-lead UDFN pack-  
ages. In addition, the entire family is available in 1.8V (1.8V to 5.5V).  
The AT25128B/256B is enabled through the Chip Select pin (CS) and accessed via a  
3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and  
Serial Clock (SCK). All programming cycles are completely self-timed, and no sepa-  
rate Erase cycle is required before Write.  
Table 0-1.  
Pin  
Pin Configurations  
Function  
8-lead SOIC  
8-lead TSSOP  
CS  
SO  
VCC  
CS  
SO  
1
2
3
4
8
7
6
5
VCC  
1
2
3
4
8
7
6
5
CS  
Chip Select  
HOLD  
SCK  
SI  
HOLD  
SCK  
SI  
WP  
WP  
SCK  
SI  
Serial Data Clock  
Serial Data Input  
Serial Data Output  
Ground  
GND  
GND  
SO  
8-lead UDFN  
8-ball VFBGA  
GND  
VCC  
8
7
6
5
1
2
3
4
VCC  
8
7
6
5
1
2
3
4
CS  
VCC  
CS  
SO  
HOLD  
SCK  
SI  
SO  
HOLD  
SCK  
SI  
Power Supply  
Write Protect  
WP  
GND  
WP  
WP  
GND  
HOLD  
Suspends Serial Input  
Bottom View  
Bottom View  
Block Write protection is enabled by programming the status register with top ¼, top ½  
or entire array of write protection. Separate Program Enable and Program Disable  
instructions are provided for additional data protection. Hardware data protection is  
provided via the WP pin to protect against inadvertent write attempts to the status reg-  
ister. The HOLD pin may be used to suspend any serial communication without  
resetting the serial sequence.  
8698B–SEEPR–3/10  

AT25128B-XHL-T 替代型号

型号 品牌 替代类型 描述 数据表
AT25128B-XHL-B ATMEL

完全替代

serial electrically-erasable programmable read only memory

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