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AT24C512BN-SH25-B PDF预览

AT24C512BN-SH25-B

更新时间: 2024-11-27 06:38:19
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路光电二极管双倍数据速率异步传输模式PCATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 675K
描述
Two-wire Serial EEPROM 512K (65,536 x 8)

AT24C512BN-SH25-B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.69
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:579547Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:8S1Samacsys Released Date:2017-01-11 11:27:27
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9 mm
内存密度:524288 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:65536 words字数代码:64000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

AT24C512BN-SH25-B 数据手册

 浏览型号AT24C512BN-SH25-B的Datasheet PDF文件第2页浏览型号AT24C512BN-SH25-B的Datasheet PDF文件第3页浏览型号AT24C512BN-SH25-B的Datasheet PDF文件第4页浏览型号AT24C512BN-SH25-B的Datasheet PDF文件第5页浏览型号AT24C512BN-SH25-B的Datasheet PDF文件第6页浏览型号AT24C512BN-SH25-B的Datasheet PDF文件第7页 
Features  
Low-voltage and Standard-voltage Operation  
– 1.8v (VCC = 1.8V to 3.6V)  
– 2.5v (VCC = 2.5V to 5.5V)  
Internally Organized 65,536 x 8  
Two-wire Serial Interface  
Schmitt Triggers, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
1 MHz (2.5V, 5.5V), 400 kHz (1.8V) Compatibility  
Write Protect Pin for Hardware and Software Data Protection  
128-byte Page Write Mode (Partial Page Writes Allowed)  
Self-timed Write Cycle (5 ms Max)  
Two-wire Serial  
EEPROM  
High Reliability  
512K (65,536 x 8)  
– Endurance: 1,000,000 Write Cycles  
– Data Retention: 40 Years  
Lead-free/Halogen-free Devices  
AT24C512B  
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead TSSOP, 8-ball dBGA2, and  
8-lead Ultra Thin Small Array (SAP) Packages  
Die Sales: Wafer Form, Waffle Pack and Bumped Die  
with Three Device Address Inputs  
Description  
The AT24C512B provides 524,288 bits of serial electrically erasable and programma-  
ble read only memory (EEPROM) organized as 65,536 words of 8 bits each. The  
device’s cascadable feature allows up to eight devices to share a common two-wire  
bus. The device is optimized for use in many industrial and commercial applications  
where low-power and low-voltage operation are essential. The devices are available  
in space-saving 8-pin PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead TSSOP,  
8-ball dBGA2 and 8-lead Ultra Thin SAP packages. In addition, the entire family is  
available in 1.8V (1.8V to 3.6V) and 2.5V (2.5V to 5.5V) versions.  
Table 0-1.  
Pin Name  
A0–A2  
SDA  
Pin Configurations  
Function  
8-lead TSSOP  
8-lead PDIP  
Address Inputs  
Serial Data  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
SCL  
Serial Clock Input  
Write Protect  
A2  
SCL  
SDA  
A2  
SCL  
SDA  
WP  
GND  
GND  
8-lead SOIC  
8-lead Ultra Thin SAP  
8-ball dBGA2  
VCC 8  
WP 7  
1 A0  
2 A1  
3 A2  
4 GND  
VCC  
WP  
8
1 A0  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
7
2
A1  
WP  
SCL 6  
SDA 5  
SCL  
SDA  
6
5
3
A2  
A2  
SCL  
SDA  
4
GND  
GND  
Bottom View  
Rev. 5297A–SEEPR–1/08  
Bottom View  

AT24C512BN-SH25-B 替代型号

型号 品牌 替代类型 描述 数据表
AT24C512BN-SH25-T ATMEL

完全替代

Two-wire Serial EEPROM 512K (65,536 x 8)
24LC512-I/ST MICROCHIP

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24LC512-I/SN MICROCHIP

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