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AT24C256BN-SH-B PDF预览

AT24C256BN-SH-B

更新时间: 2024-11-18 06:38:19
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路光电二极管双倍数据速率异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
24页 720K
描述
Two-wire Serial EEPROM

AT24C256BN-SH-B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, HALOGEN FREE AND LEAD FREE, PLASTIC, MS-012AA, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.31
Is Samacsys:N最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9 mm
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

AT24C256BN-SH-B 数据手册

 浏览型号AT24C256BN-SH-B的Datasheet PDF文件第2页浏览型号AT24C256BN-SH-B的Datasheet PDF文件第3页浏览型号AT24C256BN-SH-B的Datasheet PDF文件第4页浏览型号AT24C256BN-SH-B的Datasheet PDF文件第5页浏览型号AT24C256BN-SH-B的Datasheet PDF文件第6页浏览型号AT24C256BN-SH-B的Datasheet PDF文件第7页 
Features  
Low-voltage and Standard-voltage Operation  
– 1.8 (VCC = 1.8V to 5.5V)  
Internally Organized as 32,768 x 8  
Two-wire Serial Interface  
Schmitt Trigger, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
1 MHz (5.0V, 2.7V, 2.5V), and 400 kHz (1.8V) Compatibility  
Write Protect Pin for Hardware and Software Data Protection  
64-byte Page Write Mode (Partial Page Writes Allowed)  
Self-timed Write Cycle (5 ms Max)  
Two-wire Serial  
EEPROM  
High Reliability  
– Endurance: One Million Write Cycles  
256K (32,768 x 8)  
– Data Retention: 40 Years  
Lead-free/Halogen-free Devices Available  
8-lead JEDEC PDIP, 8-lead JEDEC SOIC, EIAJ SOIC, 8-lead Ultra Thin Small Array  
Package (SAP), 8-lead TSSOP, and 8-ball dBGA2 Packages  
Die Sales: Wafer Form, Waffle Pack and Bumped Wafers  
AT24C256B  
Description  
The AT24C256B provides 262,144 bits of serial electrically erasable and programma-  
ble read-only memory (EEPROM) organized as 32,768 words of 8 bits each. The  
device’s cascadable feature allows up to eight devices to share a common two-wire  
bus. The device is optimized for use in many industrial and commercial applications  
where low-power and low-voltage operation are essential. The devices are available  
in space-saving 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin SAP, 8-  
lead TSSOP, and 8-ball dBGA2 packages. In addition, the entire family is available in  
a 1.8V (1.8V to 5.5V) version.  
Pin Configurations  
8-lead PDIP  
8-lead SOIC  
1
2
3
4
8
7
6
5
8
7
6
5
A0  
A1  
VCC  
WP  
A0  
A1  
1
2
3
4
VCC  
WP  
Pin Name  
A0–A2  
SDA  
Function  
Address Inputs  
Serial Data  
Serial Clock Input  
Write Protect  
Ground  
A2  
SCL  
SDA  
A2  
SCL  
SDA  
GND  
GND  
SCL  
8-lead dBGA2  
8-lead TSSOP  
WP  
VCC  
8
7
6
5
1
A0  
8
A0  
A1  
A2  
1
2
3
4
VCC  
GND  
WP  
SCL  
SDA  
2
A1  
7
6
5
WP  
3
4
A2  
SCL  
SDA  
GND  
GND  
Bottom View  
8-lead Ultra Thin SAP  
VCC  
WP  
8
7
6
5
1
2
3
4
A0  
A1  
A2  
SCL  
SDA  
GND  
Rev. 5279C–SEEPR–3/09  
Bottom View  

AT24C256BN-SH-B 替代型号

型号 品牌 替代类型 描述 数据表
AT24C256C-SSHL-T ATMEL

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Two-wire Serial EEPROM 256K (32,768 x 8)

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