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AT24C128BN-SH-B PDF预览

AT24C128BN-SH-B

更新时间: 2024-11-24 04:49:43
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路光电二极管双倍数据速率异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
23页 1008K
描述
Two-wire Serial EEPROM

AT24C128BN-SH-B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, LEAD FREE AND HALOGEN FREE, PLASTIC, MS-012AA, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.67
最大时钟频率 (fCLK):1 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:131072 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:16384 words
字数代码:16000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

AT24C128BN-SH-B 数据手册

 浏览型号AT24C128BN-SH-B的Datasheet PDF文件第2页浏览型号AT24C128BN-SH-B的Datasheet PDF文件第3页浏览型号AT24C128BN-SH-B的Datasheet PDF文件第4页浏览型号AT24C128BN-SH-B的Datasheet PDF文件第5页浏览型号AT24C128BN-SH-B的Datasheet PDF文件第6页浏览型号AT24C128BN-SH-B的Datasheet PDF文件第7页 
1. Features  
Low-voltage and Standard-voltage Operation  
– 1.8 (VCC = 1.8V to 5.5V)  
Internally Organized as 16,384 x 8  
Two-wire Serial Interface  
Schmitt Trigger, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
1 MHz (5.5V, 2.5V), and 400 kHz (1.8V) Compatibility  
Write Protect Pin for Hardware and Software Data Protection  
64-byte Page Write Mode (Partial Page Writes Allowed)  
Self-timed Write Cycle (5 ms Max)  
Two-wire Serial  
EEPROM  
High Reliability  
– Endurance: One Million Write Cycles  
128K (16,384 x 8)  
– Data Retention: 40 Years  
Lead-free/Halogen-free  
8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini MAP, 8-lead Ultra Lead  
Frame Land Grid Array (ULA), 8-lead TSSOP, and 8-ball dBGA2 Packages  
Die Sales: Wafer Form, Tape and Reel and Bumped Wafers  
AT24C128B  
2. Description  
The AT24C128B provides 131,072 bits of serial electrically erasable and programma-  
ble read-only memory (EEPROM) organized as 16,384 words of 8 bits each. The  
device’s cascadable feature allows up to eight devices to share a common two-wire  
bus. The device is optimized for use in many industrial and commercial applications  
where low-power and low-voltage operation are essential. The devices are available  
in space-saving 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini  
MAP, 8-lead Ultra Lead Frame Land Grid Array (ULA), 8-lead TSSOP, and 8-ball  
dBGA2 packages. In addition, the entire family is available in a 1.8V (5.5V to 3.6V)  
version.  
8-lead PDIP  
8-lead SOIC  
1
2
3
4
A0  
A1  
8
7
6
5
VCC  
WP  
8
7
6
5
A0  
A1  
1
2
3
4
VCC  
WP  
Table 0-1.  
Pin Configurations  
A2  
SCL  
SDA  
A2  
SCL  
SDA  
GND  
GND  
Pin Name  
A0–A2  
SDA  
Function  
Address Inputs  
Serial Data  
Serial Clock Input  
Write Protect  
Ground  
8-lead dBGA2  
8-lead TSSOP  
VCC  
8
7
6
5
1
2
3
4
A0  
8
7
6
5
A0  
1
2
3
4
VCC  
WP  
SCL  
SDA  
A1  
A1  
A2  
WP  
SCL  
A2  
SCL  
SDA  
GND  
GND  
WP  
Bottom View  
8-lead Ultra Lead Frame Land Grid Array  
GND  
8-lead Ultra Thin Mini MAP  
VCC  
WP  
8
7
6
5
1
2
3
4
A0  
VCC  
WP  
8
7
6
5
1
2
3
4
A0  
A1  
A1  
SCL  
SDA  
A2  
SCL  
SDA  
A2  
GND  
GND  
Bottom View  
Bottom View  
Rev. 5296A–SEEPR–1/08  

AT24C128BN-SH-B 替代型号

型号 品牌 替代类型 描述 数据表
AT24C128BN-SH-T ATMEL

完全替代

Two-wire Serial EEPROM
24AA128-I/SN MICROCHIP

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128K I2C CMOS Serial EEPROM

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