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AT24C08B-TH-B PDF预览

AT24C08B-TH-B

更新时间: 2024-11-05 11:51:39
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 685K
描述
Two-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8)

AT24C08B-TH-B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:TSSOP, TSSOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.65
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DMMRJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.4 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:1024 words字数代码:1000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:I2C最大待机电流:0.000003 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

AT24C08B-TH-B 数据手册

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Features  
Low-voltage and Standard-voltage Operation  
– 1.8 (VCC = 1.8V to 5.5V)  
Internally Organized 512 x 8 (4K), or 1024 x 8 (8K)  
Two-wire Serial Interface  
Schmitt Trigger, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
1 MHz (5V), 400 kHz (1.8V, 2.5V, 2.7V) Compatibility  
Write Protect Pin for Hardware Data Protection  
16-byte Page (4K, 8K) Write Modes  
Partial Page Writes Allowed  
Two-wire  
Serial EEPROM  
4K (512 x 8)  
Self-timed Write Cycle (5 ms max)  
High-reliability  
– Endurance: 1 Million Write Cycles  
– Data Retention: 100 Years  
8K (1024 x 8)  
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra-Thin Mini-MAP (MLP 2x3), 5-lead SOT23,  
8-lead TSSOP and 8-ball dBGA2 Packages  
Lead-free/Halogen-free  
Die Sales: Wafer Form, Tape and Reel and Bumped Wafers  
AT24C04B  
AT24C08B  
Description  
The AT24C04B/08B provides 4096/8192 bits of serial electrically erasable and pro-  
grammable read-only memory (EEPROM) organized as 512/1024 words of 8 bits  
each. The device is optimized for use in many industrial and commercial applications  
where low-power and low-voltage operation are essential. The AT24C04B/08B is  
available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra-Thin Mini-  
MAP (MLP 2x3), 5-lead SOT23, 8-lead TSSOP, and 8-ball dBGA2 packages and is  
accessed via a Two-wire serial interface. In addition, the AT24C04B/08B is available  
in 1.8V (1.8V to 5.5V) version.  
Table 0-1.  
Pin Name  
A0 - A2  
SDA  
Pin Configuration  
Function  
8-lead Ultra-Thin  
Mini-MAP (MLP 2x3)  
8-ball dBGA2  
Address Inputs  
Serial Data  
VCC 8  
WP 7  
SCL 6  
1 A0  
2 A1  
3 A2  
4 GND  
8
7
6
5
1
2
3
4
A0  
VCC  
WP  
A1  
A2  
SCL  
SDA  
SCL  
Serial Clock Input  
Write Protect  
No Connect  
SDA  
5
GND  
Bottom View  
Bottom View  
WP  
8-lead TSSOP  
8-lead SOIC  
NC  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
GND  
Ground  
A2  
SCL  
SDA  
A2  
SCL  
SDA  
VCC  
Power Supply  
GND  
GND  
Note:  
For use of 5-lead SOT23  
4K: The software A2 and A1 bits in the device  
address word must be set to zero to properly  
communicate.  
8-lead PDIP  
5-lead SOT23  
8
7
6
5
VCC  
A0  
1
2
3
4
WP  
SCL  
GND  
SDA  
1
2
3
5
WP  
A1  
A2  
8K: The software A2 bit in the device address word  
must be set to zero to properly communicate.  
SCL  
SDA  
VCC  
4
GND  
5226D–SEEPR–7/08  

AT24C08B-TH-B 替代型号

型号 品牌 替代类型 描述 数据表
AT24C08B-TH-T ATMEL

完全替代

Two-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8)
M24C08-WDW6TP STMICROELECTRONICS

功能相似

16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
M24C08-RDW6TP STMICROELECTRONICS

功能相似

16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM

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