Datasheet > AT-42036-TR1

AT-42036-TR1

更新时间： 2024-09-14 23:32:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
6页	75K
描述
TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 80MA I(C) \| MICRO-X

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT-42036-TR1 数据手册

Agilent AT-42036

Up to 6 GHz Medium Power

Silicon Bipolar Transistor

Data Sheet

Features

• High output power:

21.0 dBm typical P_{1 dB}at 2.0 GHz

20.5 dBm typical P_{1 dB}at 4.0 GHz

• High gain at 1 dB compression:

14.0 dB typical G_{1 dB}at 2.0 GHz

9.5 dB typical G_{1 dB}at 4.0 GHz

• Low noise figure:

1.9 dB typical NF_Oat 2.0 GHz

Description

oscillator applications in the VHF,

UHF, and microwave frequencies.

An optimum noise match near

50 Ω up to 1 GHz, makes this

device easy to use as a low noise

amplifier.

Agilent’s AT-42036 is a general

purpose NPN bipolar transistor

that offers excellent high

frequency performance. The

AT-42036 is housed in a cost

effective surface mount 100 mil

micro-X package. The 4 micron

emitter-to-emitter pitch enables

this transistor to be used in many

• High gain-bandwidth product:

8.0 GHz typical f_T

• Cost effective ceramic microstrip

package

The AT-42036 bipolar transistor is

fabricated using Agilent’s 10 GHz

f_TSelf-Aligned-Transistor (SAT)

36 micro-X Package

different functions. The 20 emitter process. The die is nitride passi-

finger interdigitated geometry

yields a medium sized transistor

with impedances that are easy to

match for low noise and medium

power applications. This device is

designed for use in low noise,

wideband amplifier, mixer and

vated for surface protection.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metalization

in the fabrication of this device.

12 3 4 5 6

中文翻译

下载PDF

与AT-42036-TR1相关器件

型号	品牌	获取价格	描述	数据表
AT42070	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80MA I(C) \| MICRO-X
AT-42070	AGILENT	获取价格	Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-42070	AVAGO	获取价格	Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-42070G	AGILENT	获取价格	RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN
AT4208	RAYTHEON	获取价格	Transistor,
AT42085	AGILENT	获取价格	Up to 6 GHz Medium Power Up to 6 GHz Medium Power
AT-42085	AGILENT	获取价格	Up to 6 GHz Medium Power Up to 6 GHz Medium Power
AT-42085	AVAGO	获取价格	Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-42085G	AVAGO	获取价格	Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT42086	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80MA I(C) \| FO-163