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ASTD1020-820 PDF预览

ASTD1020-820

更新时间: 2024-12-01 14:47:47
品牌 Logo 应用领域
ASI 二极管
页数 文件大小 规格书
3页 33K
描述
Tunnel Diode, 18GHz Max, 0.135V V(F) @Ipeak, 0.2mA Ipeak, Silicon, 820, 2 PIN

ASTD1020-820 技术参数

生命周期:Active包装说明:S-XXMW-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.56Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
最大二极管正向电阻:7 Ω二极管类型:TUNNEL DIODE
最大正向电压 (VF):0.135 VJESD-30 代码:S-XXMW-F2
元件数量:1端子数量:2
最大工作频率:18 GHz最高工作温度:110 °C
最低工作温度:-65 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:MICROWAVE
最大峰点电流:最大功率耗散:0.05 W
认证状态:Not Qualified子类别:Microwave Special Purpose Diodes
表面贴装:YES技术:TUNNEL
端子形式:FLAT端子位置:UNSPECIFIED
Base Number Matches:1

ASTD1020-820 数据手册

 浏览型号ASTD1020-820的Datasheet PDF文件第2页浏览型号ASTD1020-820的Datasheet PDF文件第3页 
ASTD SERIES  
PLANAR TUNNEL (BACK) DIODE  
DESCRIPTION:  
The ASTD Series of Tunnel Diodes  
are Optimized for Operation as Back  
Diode Detectors in Applications up  
to 18 GHz.  
PACKAGE STYLE 51  
FEATURES INCLUDE:  
Excellent Temperature Stability  
Fast Rise / Fall Times  
Available in Die Form  
MAXIMUM RATINGS  
10 mA  
IR  
3 ERG spike  
PDISS  
PDISS  
TJ  
50 mW @ TA = +60 OC  
-65 to +110 OC  
-65 to +125 OC  
TSTG  
ELECTRICAL CHARACTERISTICS TC = 25 OC  
SYMBOL  
IP  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
ASTD 1020  
ASTD 2030  
ASTD 3040  
ASTD 4050  
ASTD 5060  
100  
200  
300  
400  
500  
200  
300  
400  
500  
600  
µA  
mV  
mV  
VF  
IF = 3 mA  
ASTD 1020  
ASTD 2030  
ASTD 3040  
ASTD 4050  
ASTD 5060  
135  
130  
125  
120  
110  
VR  
400  
IR = 500 µA  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. B  
1/3  

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