Datasheet > ASTD-4050-860

ASTD-4050-860

更新时间： 2024-11-07 03:19:31

品牌	Logo	应用领域
ASI		二极管局域网
页数	文件大小	规格书
3页	36K
描述
PLANAR TUNNEL (BACK) DIODE

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ASTD-4050-860 数据手册

ASTD SERIES

PLANAR TUNNEL (BACK) DIODE

DESCRIPTION:

The ASTD Series of Tunnel Diodes

are Optimized for Operation as Back

Diode Detectors in Applications up

to 18 GHz.

PACKAGE STYLE 51

FEATURES INCLUDE:

• Excellent Temperature Stability

• Fast Rise / Fall Times

• Available in Die Form

MAXIMUM RATINGS

10 mA

I_R

3 ERG spike

P_DISS

T_J

50 mW @ T_A= +60 ^OC

-65 to +110 ^OC

-65 to +125 ^OC

T_STG

ELECTRICAL CHARACTERISTICS ^T_C= 25 ^OC

SYMBOL

I_P

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

ASTD 1020

ASTD 2030

ASTD 3040

ASTD 4050

ASTD 5060

100

200

300

400

500

200

300

400

500

600

µA

V_F

I_F= 3 mA

ASTD 1020

ASTD 2030

ASTD 3040

ASTD 4050

ASTD 5060

135

130

125

120

110

V_R

400

I_R= 500 µA

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/3

12 3

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