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ASTD-2030-51 PDF预览

ASTD-2030-51

更新时间: 2024-11-07 03:19:31
品牌 Logo 应用领域
ASI 二极管局域网
页数 文件大小 规格书
3页 36K
描述
PLANAR TUNNEL (BACK) DIODE

ASTD-2030-51 数据手册

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ASTD SERIES  
PLANAR TUNNEL (BACK) DIODE  
DESCRIPTION:  
The ASTD Series of Tunnel Diodes  
are Optimized for Operation as Back  
Diode Detectors in Applications up  
to 18 GHz.  
PACKAGE STYLE 51  
FEATURES INCLUDE:  
Excellent Temperature Stability  
Fast Rise / Fall Times  
Available in Die Form  
MAXIMUM RATINGS  
10 mA  
IR  
3 ERG spike  
PDISS  
PDISS  
TJ  
50 mW @ TA = +60 OC  
-65 to +110 OC  
-65 to +125 OC  
TSTG  
ELECTRICAL CHARACTERISTICS TC = 25 OC  
SYMBOL  
IP  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
ASTD 1020  
ASTD 2030  
ASTD 3040  
ASTD 4050  
ASTD 5060  
100  
200  
300  
400  
500  
200  
300  
400  
500  
600  
µA  
mV  
mV  
VF  
IF = 3 mA  
ASTD 1020  
ASTD 2030  
ASTD 3040  
ASTD 4050  
ASTD 5060  
135  
130  
125  
120  
110  
VR  
400  
IR = 500 µA  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. B  
1/3  

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