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ASRD820T-TR PDF预览

ASRD820T-TR

更新时间: 2024-11-21 03:19:31
品牌 Logo 应用领域
ASI 二极管阶跃恢复二极管光电二极管
页数 文件大小 规格书
3页 67K
描述
SURFACE MOUNT STEP RECOVERY DIODE

ASRD820T-TR 技术参数

生命周期:Active零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.77
Is Samacsys:N最小击穿电压:50 V
配置:SINGLE最大二极管电容:2.5 pF
最小二极管电容:1.5 pF二极管元件材料:SILICON
二极管类型:STEP RECOVERY DIODEJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.1 W
认证状态:Not Qualified最大重复峰值反向电压:50 V
子类别:Varactors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

ASRD820T-TR 数据手册

 浏览型号ASRD820T-TR的Datasheet PDF文件第2页浏览型号ASRD820T-TR的Datasheet PDF文件第3页 
ASRD 800 SERIES  
SURFACE MOUNT STEP RECOVERY DIODE  
DESCRIPTION:  
The ASRD 800 Series of Step  
Recovery Diodes are Designed for  
Synthesiser and Sampler Applications  
Requiring a High Performance to  
Cost Ratio.  
PACKAGE STYLE SOD- 323  
FEATURES INCLUDE:  
Transition Time as Low as 70 pS  
Surface Mount SOD323 Package  
MAXIMUM RATINGS  
50 mA  
IF  
VR  
UP TO RATED VBR  
100 mW  
PDISS  
TJ  
-55 to +150 OC  
-55 to +150 OC  
1.25 OC /mW  
TSTG  
θJC  
STATIC ELECTRICAL CHARACTERISTICS TC = 25 OC  
SYMBOL  
VBR  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IR = 10 µA  
ASRD 803  
ASRD 806  
ASRD 808  
ASRD 814  
ASRD 820  
ASRD 830  
15  
20  
25  
40  
50  
60  
V
CJ6  
VR = 6 V  
f = 1 MHz  
ASRD 803  
ASRD 806  
ASRD 808  
ASRD 814  
ASRD 820  
ASRD 830  
0.2  
0.4  
0.5  
1.0  
1.5  
2.5  
0.4  
0.8  
1.0  
1.7  
2.5  
3.5  
pF  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/3  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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