Datasheet > ASM3P2779A

ASM3P2779A

更新时间： 2024-11-18 06:38:11

品牌	Logo	应用领域
PULSECORE		/
页数	文件大小	规格书
12页	176K
描述
Low Power Peak EMI Reducing Solution

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ASM3P2779A 数据手册

November 2006

rev 3.2

ASM3P2779A

Low Power Peak EMI Reducing Solution

Features

The ASM3P2779A uses the most efficient and optimized

modulation profile approved by the FCC and is

implemented by using a proprietary all digital method.

•

Generates an EMI optimized clock signal at the

output.

•

Integrated loop filter components.

Operates with a 3.3 / 2.5V Supply.

Operating current less than 4mA.

Low power CMOS design.

Input frequency range: 13MHz to 30MHz for 2.5V.

: 13MHz to 30MHz for 3.3V.

Generates a 1X low EMI spread spectrum clock of

the input frequency.

Frequency deviation: ±1% (Typ) @16MHz Input

Frequency.

The ASM3P2779A modulates the output of a single PLL

in order to “spread” the bandwidth of a synthesized clock,

and more importantly, decreases the peak amplitudes of

its harmonics. This results in significantly lower system

EMI compared to the typical narrow band signal produced

by oscillators and most frequency generators. Lowering

EMI by increasing a signal’s bandwidth is called ‘spread

spectrum clock generation’.

•

Applications

Available in 6-pin TSOT-23, 8-pin SOIC and 8-pin

TSSOP packages.

The ASM3P2779A is targeted towards all portable

devices with very low power requirements like MP3

players and digital still cameras.

Product Description

The ASM3P2779A is

a versatile spread spectrum

Key Specifications

Description

Supply voltages

Cycle-to-Cycle Jitter

Output Duty Cycle

Modulation Rate Equation

Frequency Deviation

frequency modulator designed specifically for a wide

range of clock frequencies. The ASM3P2779A reduces

electromagnetic interference (EMI) at the clock source,

allowing system wide reduction of EMI of all clock

dependent signals. The ASM3P2779A allows significant

system cost savings by reducing the number of circuit

board layers ferrite beads, shielding that are traditionally

required to pass EMI regulations.

Specification

V_DD= 3.3V / 2.5V

200pS (Max)

45/55%

F_IN/640

±1% (Typ) @ 16MHz

Block Diagram

VDD

PLL

Modulation

XIN/CLKIN

XOUT

Crystal

Frequency

Divider

Oscillator

Output

Divider

Phase

Loop

Filter

VCO

Detector

Feedback

Divider

ModOUT

VSS

PulseCore Semiconductor Corporation

1715 S. Bascom Ave Suite 200, Campbell, CA 95008 • Tel: 408-879-9077 • Fax: 408-879-9018

www.pulsecoresemi.com

Notice: The information in this document is subject to change without notice.

12 3 4 5 6 7...12

中文翻译

下载PDF

与ASM3P2779A相关器件

型号	品牌	获取价格	描述	数据表
ASM3P2779A-06OR	ALSC	获取价格	Low Power Peak EMI Reducing Solution
ASM3P2779A-08SR	ALSC	获取价格	Low Power Peak EMI Reducing Solution
ASM3P2779A-08ST	ALSC	获取价格	Low Power Peak EMI Reducing Solution
ASM3P2779A-08TR	ALSC	获取价格	Low Power Peak EMI Reducing Solution
ASM3P2779A-08TT	ALSC	获取价格	Low Power Peak EMI Reducing Solution
ASM3P2779AF-06OR	ALSC	获取价格	Low Power Peak EMI Reducing Solution
ASM3P2779AF-06OR	ONSEMI	获取价格	Peak EMI Reducing Solution
ASM3P2779AF-06OR	PULSECORE	获取价格	Low Power Peak EMI Reducing Solution
ASM3P2779AF-08SR	PULSECORE	获取价格	Low Power Peak EMI Reducing Solution
ASM3P2779AF-08SR	ALSC	获取价格	Low Power Peak EMI Reducing Solution

与ASM3P2779A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

ASM3P2779A

ASM3P2779A 数据手册

与ASM3P2779A相关器件

与ASM3P2779A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ASM3P2779A

ASM3P2779A 数据手册

与ASM3P2779A相关器件

与ASM3P2779A相关文章

您还可以找

您在本页遇到什么问题？