Datasheet > ASI10868

ASI10868

更新时间： 2024-11-14 04:07:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	34K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册

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ASI10868 数据手册

CBSL2SS

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .205 4L STUD

The ASI CBSL2SS is Designed for

UHF Class A Amplifier Applications in

Cellular Base Station Equipment.

FEATURES:

• Pg = 9.0 dB min. @ 960 MHz

• P_1dB= 2.0 Watts min. at 960 MHz

• Omnigold™ Metalization System

#8-32UNC

MAXIMUM RATINGS

2.0 A

45 V

I_C

MINIMUM

inches / mm

MAXIMUM

inches / mm

V_CBO

V_CER

V_EBO

P_DISS

T_J

DIM

.976 / 24.800

.028 / 0.700

1.000 / 25.4000

.031 / 0.800

30 V

3.5 V

.138 / 3.500

.161 / 4.100

.098 / 2.500

.200 / 5.100

.196 / 5.000

.110 / 2.800

.208 / 5.300

7.0 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

25 ^°C/W

.004 / 0.100

.425 / 10.800

.200 / 5.100

.006 / 0.150

.465 / 11.800

2.05 / 5.200

T_STG

θ_JC

ORDER CODE: ASI10868

CHARACTERISTICS T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 1.0 mA

I_C= 5.0 mA

I_E= 1.0 mA

BV_CER

BV_EBO

I_CBO

R_BE= 220 Ω

I_C= 100 mA

P_OUT= 2.0 V

3.5

_CB= 28 V

_CE= 5.0 V

500

120

µA

---

h_FE

V_CB= 24 V

f = 1.0 MHz

f = 960 MHz

3.5

C_OB

9.0

P_G

V_CC= 24 V

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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